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The BFS505 is an NPN wideband transistor housed in a plastic SOT323 envelope. It is designed for low-power amplifiers, oscillators, and mixers in RF portable communication equipment up to 2 GHz. Key electrical parameters include a collector-base voltage of 20 V, DC collector current of 18 mA, and total power dissipation of 150 mW at 147 °C. The device exhibits a transition frequency of 9 GHz, maximum unilateral power gain of 17 dB at 900 MHz, and a noise figure as low as 1.2 dB.
Verify the specific ordering suffix against official documentation to confirm package orientation and tape reel specifications. Confirm product status as discontinued or obsolete before initiating design-in processes. Ensure compliance with RoHS directives and check for available replacement components if long-term supply assurance is required for production.
Select this component for applications requiring high-frequency operation up to 2 GHz with low power consumption. Evaluate thermal resistance requirements, noting the junction-to-soldering point thermal resistance is 190 K/W. Consider the SOT323 package constraints for PCB layout and ensure biasing conditions align with the specified DC current gain and voltage limits for optimal performance.
The BFS505 belongs to the NXP Semiconductors discrete semiconductor portfolio, specifically categorized as an NPN wideband transistor. It is part of the historical product line intended for RF applications in portable communications. The device utilizes a plastic surface-mounted SOT323 envelope, providing a compact solution for high-frequency signal processing tasks in consumer electronics.
Public confirmed substitute part numbers are not provided in the source material.