BFT92,215

Overview

The BFT92,215 is a PNP silicon RF transistor manufactured by NXP USA Inc., designed for broadband amplifier applications. It operates within a frequency range up to 4 GHz and supports collector currents up to 20 mA. The device features a maximum DC collector current of 25 mA and a maximum collector-emitter voltage of 15 V. Key electrical limits include a maximum collector-base voltage of 20 V and a maximum emitter-base voltage of 2 V. The component has a maximum power dissipation of 300 mW and a maximum operating temperature of +150 °C. It utilizes an SOT-323 (SC-70) surface-mount package with dimensions of 1 x 2.2 x 1.35 mm.

Feature Summary

• Designed for broadband amplifier applications up to 2 GHz at specified collector currents
• Complementary pairing available with the BFR92A NPN wideband transistor
• Optimized for high-frequency performance in small signal RF circuits

Applications

• Broadband amplifiers operating up to 2 GHz
• RF signal processing circuits requiring PNP wideband characteristics
• Discrete Voltage Controlled Oscillators (VCOs) based on complementary transistor pairs

Procurement Notes

Verify the specific ordering suffix against official NXP documentation to confirm package type and tape/reel specifications. Ensure the component meets RoHS compliance requirements if mandated by the design. Cross-reference the manufacturer part number with distributor listings to confirm availability status, as some variants may be discontinued or subject to long-term supply agreements.

Selection Notes

Select this component when a PNP counterpart to the BFR92A NPN transistor is required for balanced differential stages or push-pull configurations. Consider the 15 V collector-emitter voltage limit and 25 mA current rating for circuit biasing. The SOT-323 package is suitable for space-constrained designs requiring surface-mount technology. Verify thermal management capabilities given the 300 mW power dissipation limit in the small outline package.

Part Context

The BFT92 series belongs to NXP's portfolio of silicon RF transistors intended for high-frequency applications. It serves as the PNP complement to the BFR92/NPN family, enabling symmetrical circuit designs. The device is engineered for use in broadband amplifiers and oscillators where consistent gain and phase characteristics are critical across the operational bandwidth.

Replacement Considerations

Public confirmed substitute part numbers are not provided in the available documentation. Designers should consult official NXP replacement guides or datasheets for direct equivalents.