BFT93,215

BFT93,215

  • Description:RF TRANS PNP 12V 5GHZ SOT-23
  • Series:-

SKU:92a81fb7eed8 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS PNP 12V 5GHZ SOT-23
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:5GHz
  • Noise Figure (dB Typ @ f):2.4dB @ 500MHz
  • Gain:-
  • Power - Max:300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 30mA, 5V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23 (TO-236AB)
  • Grade:-
  • Qualification:-

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BFT93,215

Overview

The BFT93,215 is a PNP silicon wideband transistor manufactured by NXP Semiconductors. It is housed in a plastic SOT-23 (TO-236AB) surface-mount envelope designed for radio frequency applications. The device features a maximum collector current of 7 mA and a collector-emitter voltage rating of 5 V. Its transition frequency reaches 5000 MHz, supporting high-frequency operation. The component operates within a temperature range up to +175 °C and dissipates a maximum power of 32 mW.

Feature Summary

  • Engineered for RF wideband amplifier circuits including aerial amplifiers, radar systems, oscilloscopes, and spectrum analyzers.
  • Delivers low intermodulation distortion and high power gain suitable for demanding signal processing environments.
  • Utilizes a very high transition frequency to maintain excellent wideband properties and low noise characteristics at elevated frequencies.

Applications

  • Aerial amplifiers
  • Radar systems
  • Oscilloscopes
  • Spectrum analyzers

Procurement Notes

Verify the specific ordering code BFT93,215 against official NXP documentation to confirm the reel quantity and tape-and-reel packaging specifications. Ensure the procurement channel provides valid traceability for the semiconductor batch. Cross-reference the datasheet revision date to guarantee compatibility with current design requirements and regulatory standards.

Selection Notes

Select this component when designing PNP stages for wideband RF amplification requiring low distortion. The SOT-23 package suits space-constrained PCB layouts. Verify that the 5 V collector-emitter voltage and 7 mA current limits align with the circuit biasing conditions. Consider the complementary NPN BFR93 if an NPN counterpart is required for push-pull configurations.

Part Context

The BFT93 belongs to NXP's portfolio of silicon RF transistors optimized for broadband performance. It serves as the PNP complement to the NPN BFR93 and BFR93A devices. This family targets applications needing high linearity and low noise in the VHF and UHF frequency ranges, providing a reliable solution for analog signal conditioning in communication infrastructure.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference material. Designers should consult NXP's official replacement guide or verify pin-compatible alternatives from other manufacturers only after confirming electrical parameter equivalence and thermal characteristics.

FAQ

What is the primary application domain for the BFT93?

It is primarily intended for use in RF wideband amplifiers, such as those found in aerial amplifiers, radar systems, oscilloscopes, and spectrum analyzers.

Does the BFT93 offer low noise performance at high frequencies?

Yes, due to its very high transition frequency, it exhibits excellent wideband properties and low noise up to high frequencies.

What is the complementary NPN transistor to the BFT93?

The NPN complements to the BFT93 are the BFR93 and BFR93A transistors.

BFT93,215BFT93,215

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