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Product Detailed Parameters
- Description：RF TRANS NPN 12V 11GHZ SOT-143R
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：11GHz
- Noise Figure (dB Typ @ f)：0.65dB @ 900MHz
- Gain：21dB
- Power - Max：450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 8V
- Current - Collector (Ic) (Max)：40mA
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-143R
- Supplier Device Package：SOT-143R
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BFU530XRR is an NPN silicon RF transistor designed for high-speed, low-noise applications in a plastic SOT143R package. It belongs to the BFU5 family and supports small signal to medium power operations up to 2 GHz. Key electrical parameters include a collector-base voltage of 24 V (open emitter) or 30 V (shorted base), a collector-emitter voltage of 12 V (open base) or 24 V (shorted base), and a maximum collector current of 40 mA. The device features a transition frequency of 11 GHz, a minimum noise figure of 0.65 dB at 900 MHz, and a maximum stable gain of 21 dB at 900 MHz.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- Low noise performance with high breakdown voltage capabilities
- 11 GHz fT silicon technology for wideband operation
Applications
- Broadband amplifiers up to 2 GHz
- Low noise amplifiers for ISM applications
- ISM band oscillators
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm packaging details such as tape and reel specifications. Confirm that the component meets all required environmental and automotive qualification standards before finalizing procurement plans.
Selection Notes
Select this component for designs requiring high supply voltages and high breakdown characteristics within the 2 GHz range. Ensure biasing conditions align with the specified collector currents to optimize noise figure and gain performance for the target application frequency.
Part Context
This part is a member of the BFU5 series of NPN wideband silicon RF transistors. It shares the same core technology and package style as related models like the BFU520XR and BFU550XR, which are often included together in customer evaluation kits for comparative design purposes.
Replacement Considerations
BFU520XR
FAQ
What is the maximum collector-emitter voltage when the base is shorted?
When the base is shorted, the maximum collector-emitter voltage is 24 V.
Is this transistor suitable for automotive applications?
Yes, the BFU530XR is AEC-Q101 qualified for use in automotive applications.
What is the typical transition frequency of the device?
The typical transition frequency is 11 GHz, measured at IC = 15 mA and VCE = 8 V.
