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The BFY193PZZZA1 is a HiRel NPN Silicon RF Transistor designed for low noise and high-gain amplifiers up to 2 GHz. It features a hermetically sealed Micro-X1 package and is space qualified under ESA/SCC Detail Spec. No.: 5611/006, Type Variant No. 06. Key electrical parameters include a collector-emitter voltage (VCEO) of 12 V, a maximum collector current (IC) of 80 mA, and a total power dissipation (Ptot) of 580 mW at TS ≤ 104°C. The transition frequency (fT) reaches 8 GHz, with a typical noise figure of 2.3 dB at 2 GHz.
Verify the specific ordering code suffix against official Infineon documentation to confirm quality level and packaging details. Ensure compatibility with the required thermal management specifications, as derating is necessary when the soldering point temperature exceeds 104°C. Confirm that the component meets the necessary radiation hardness requirements for the intended mission profile.
Select this transistor for applications requiring high reliability in space or harsh environments where hermetic sealing is mandatory. Consider the 12 V collector-emitter voltage limit and 80 mA maximum collector current when designing bias circuits. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation within the operating temperature range of -65°C to +200°C.
This component belongs to Infineon's HiRel discrete and microwave semiconductor portfolio, specifically engineered for demanding aerospace and defense applications. The BFY193 series utilizes advanced silicon technology to deliver robust performance in RF signal processing tasks. Its qualification under European Space Agency standards ensures suitability for long-duration missions requiring high reliability.
BFY193 (ES)
The maximum junction temperature (Tj) is 200 °C.
Yes, the datasheet explicitly lists linear broadband amplifiers as a primary application.
The typical noise figure (F) is 2.3 dB at 2 GHz with IC = 15 mA and VCE = 5 V.