BFY193PZZZA1

BFY193PZZZA1

$246.05
  • Description:RF TRANS NPN 12V 7.5GHZ MICRO-X1
  • Series:-

SKU:3a8c80044f44 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF TRANS NPN 12V 7.5GHZ MICRO-X1
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Box
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:7.5GHz
  • Noise Figure (dB Typ @ f):2.3dB ~ 2.9dB @ 2GHz
  • Gain:12.5dB ~ 13.5dB
  • Power - Max:580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 30mA, 8V
  • Current - Collector (Ic) (Max):80mA
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:MICRO-X1
  • Supplier Device Package:MICRO-X1
  • Grade:-
  • Qualification:-

Download product information

BFY193PZZZA1

Overview

The BFY193PZZZA1 is a HiRel NPN Silicon RF Transistor designed for low noise and high-gain amplifiers up to 2 GHz. It features a hermetically sealed Micro-X1 package and is space qualified under ESA/SCC Detail Spec. No.: 5611/006, Type Variant No. 06. Key electrical parameters include a collector-emitter voltage (VCEO) of 12 V, a maximum collector current (IC) of 80 mA, and a total power dissipation (Ptot) of 580 mW at TS ≤ 104°C. The transition frequency (fT) reaches 8 GHz, with a typical noise figure of 2.3 dB at 2 GHz.

Feature Summary

  • Space qualified design compliant with ESA/SCC Detail Spec. No.: 5611/006
  • Hermetically sealed microwave package suitable for harsh environments
  • Optimized for low noise and high-gain amplifier applications

Applications

  • Low noise, high-gain amplifiers up to 2 GHz
  • Linear broadband amplifiers
  • Space-qualified electronic systems

Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to confirm quality level and packaging details. Ensure compatibility with the required thermal management specifications, as derating is necessary when the soldering point temperature exceeds 104°C. Confirm that the component meets the necessary radiation hardness requirements for the intended mission profile.

Selection Notes

Select this transistor for applications requiring high reliability in space or harsh environments where hermetic sealing is mandatory. Consider the 12 V collector-emitter voltage limit and 80 mA maximum collector current when designing bias circuits. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation within the operating temperature range of -65°C to +200°C.

Part Context

This component belongs to Infineon's HiRel discrete and microwave semiconductor portfolio, specifically engineered for demanding aerospace and defense applications. The BFY193 series utilizes advanced silicon technology to deliver robust performance in RF signal processing tasks. Its qualification under European Space Agency standards ensures suitability for long-duration missions requiring high reliability.

Replacement Considerations

BFY193 (ES)

FAQ

What is the maximum junction temperature for the BFY193?

The maximum junction temperature (Tj) is 200 °C.

Is the BFY193 suitable for linear broadband amplification?

Yes, the datasheet explicitly lists linear broadband amplifiers as a primary application.

What is the typical noise figure at 2 GHz?

The typical noise figure (F) is 2.3 dB at 2 GHz with IC = 15 mA and VCE = 5 V.

BFY193PZZZA1BFY193PZZZA1
$246.05
Buy Now