RF Amplifiers BGAP3D30HE6327XUMA1 product image

BGAP3D30HE6327XUMA1

$4.28
  • Description:WIRELESS INFRASTRUCTURE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:29d2d5ed63c8 Category: Brand:

  
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BGAP3D30HE6327XUMA1 is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is WIRELESS INFRASTRUCTURE. Review the specifications below when checking this part for your BOM.

RF Amplifiers specifications for BGAP3D30HE6327XUMA1

  • Description:WIRELESS INFRASTRUCTURE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Frequency:3.1GHz ~ 4.2GHz
  • P1dB:31.4dBm
  • Gain:40.1dB
  • Noise Figure:3.3dB
  • RF Type:4G/5G, Cellular
  • Voltage - Supply:4.75V ~ 5.25V
  • Current - Supply:315mA
  • Test Frequency:-
  • Mounting Type:Surface Mount
  • Package / Case:24-VFQFN Exposed Pad
  • Supplier Device Package:PG-VQFN-24-20
  • Grade:-
  • Qualification:-

RF Amplifiers datasheet and documents for BGAP3D30HE6327XUMA1

BGAP3D30HE6327XUMA1

RF Amplifiers Overview

The BGAP3D30HE6327XUMA1 is a single-channel driver amplifier from Infineon Technologies, designed for wireless infrastructure applications. It operates within the frequency range of 3.1 GHz to 4.2 GHz and requires an operating supply voltage between 4.75 V and 5.25 V. Key electrical specifications include a gain of 38.5 dB, a noise figure of 3.3 dB, and a P1dB compression point of 31 dBm. The device achieves an OIP3 of 41.1 dBm with an input return loss of 16 dB. It is housed in a VQFN-24 package and supports a wide operating temperature range from -40°C to +115°C.

RF Amplifiers Feature Summary

  • Engineered as a driver amplifier for high-performance wireless infrastructure systems.
  • Provides stable signal amplification across designated cellular frequency bands.
  • Optimized for low noise figure to maintain signal integrity in receiver chains.

RF Amplifiers Applications

  • Wireless infrastructure base stations
  • Cellular network equipment
  • RF front-end modules

RF Amplifiers Procurement Notes

Verify the complete part number including the suffix to ensure correct packaging configuration. Confirm RoHS compliance status through official documentation before integration. Check moisture sensitivity levels and recommended reflow profiles for surface-mount assembly processes. Ensure supply chain sources provide authentic components with traceable manufacturing data.

RF Amplifiers Selection Notes

Select this component when designing RF stages requiring specific gain and linearity metrics within the 3.1–4.2 GHz band. Evaluate thermal management requirements given the operating temperature limits and power dissipation characteristics. Compare performance against alternative drivers based on noise figure and output power capabilities for the target application architecture.

RF Amplifiers Part Context

This device belongs to Infineon's portfolio of radio frequency integrated circuits tailored for communication systems. It serves as a critical element in signal chain design, bridging lower-power stages to higher-power output amplifiers. The PG-VQFN-24 package facilitates compact PCB layout for modern electronic devices.

RF Amplifiers Replacement Considerations

Consult official replacement guides for compatible driver amplifiers with matching frequency ranges and pin configurations. Verify that substitute components meet identical electrical specifications for gain, noise, and power handling.

BGAP3D30HE6327XUMA1BGAP3D30HE6327XUMA1
$4.28
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