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The BLA8G1011L-300GU is a 300 W LDMOS power transistor designed for avionics applications operating between 1030 MHz and 1090 MHz. It features an internally matched design in an eared flanged ceramic package (SOT502F) with two mounting holes and two leads. The device supports drain-source voltages up to 65 V and junction temperatures up to 225 °C. At 1060 MHz with a 32 V supply, it delivers 300 W output power with a typical gain of 16.5 dB and drain efficiency of 56%. The component includes integrated ESD protection and enhanced ruggedness, capable of withstanding a VSWR of 10:1.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm the exact package variant. The 'G' suffix indicates RoHS compliance. Confirm that the SOT502F outline matches the required mechanical footprint and mounting hole configuration for the target application before finalizing procurement orders.
Select this component for avionics systems requiring high power output within the 1030 MHz to 1090 MHz band. Ensure the design accommodates the 65 V maximum drain-source voltage and manages heat dissipation effectively given the 300 W output capability. Verify that the internal matching network aligns with the system impedance requirements at the operating frequency.
This part belongs to the BLA8G1011L(S)-300(G) family from Ampleon. Variants include the standard flanged package (SOT502A), earless flanged package (SOT502B), and the eared flanged version (SOT502F). All variants share identical electrical characteristics but differ in mechanical mounting configurations.
Direct replacements within the same family include BLA8G1011L-300, BLA8G1011LS-300, and BLA8G1011LS-300G. Substitution requires verifying that the mechanical package dimensions and mounting hole positions are compatible with the existing PCB layout and chassis constraints.