BLA9H0912L-250U

Overview

The BLA9H0912L-250U is a 250 W LDMOS power transistor designed for avionics applications in the 960 MHz to 1215 MHz frequency range. It operates with a drain-source voltage of 50 V and delivers a typical power gain of 22 dB at an output power of 250 W. The device features a flanged ceramic package (SOT502A) with two mounting holes and two leads, facilitating screw-mount installation. Key electrical characteristics include a drain efficiency of 60% and a gate-source threshold voltage ranging from 1.5 V to 2.5 V. The component exhibits excellent ruggedness, capable of withstanding a load mismatch corresponding to VSWR = 20:1 through all phases under specified pulsed RF conditions.

Feature Summary

• High efficiency and excellent thermal stability for reliable operation
• Excellent ruggedness with high flexibility regarding pulse formats
• Integrated dual-sided ESD protection enabling excellent off-state isolation
• Internally matched design for ease of use in avionics transmitters

Applications

• Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range

Procurement Notes

Verify the specific package variant against the ordering information table. The 'U' suffix typically indicates tray packaging, but confirm the exact mechanical outline (SOT502A vs SOT502B/E/F) required for the application. Ensure compliance with RoHS standards as detailed on the manufacturer's website. Check for any export control regulations that may apply to this component before finalizing procurement.

Selection Notes

Select this component for avionics systems requiring 250 W output power within the 960 MHz to 1215 MHz band. Consider the SOT502A flanged ceramic package for screw-mount installations. Evaluate thermal management requirements based on the transient thermal impedance data provided in the datasheet. Ensure the driving circuit can support the specified gate-source voltage limits and threshold voltage variations for proper class-AB operation.

Part Context

This part belongs to the BLA9H0912L(S)-250(G) family of LDMOS avionics power transistors manufactured by Ampleon. The family includes variants with different mechanical packages such as SOT502A, SOT502B, SOT502E, and SOT502F, distinguished by ear configurations and mounting hole arrangements. All variants share identical electrical performance specifications for avionics applications.

Replacement Considerations

Direct replacements within the same family include BLA9H0912LS-250, BLA9H0912L-250G, and BLA9H0912LS-250G. These alternatives offer identical electrical characteristics but differ in mechanical package outlines (SOT502B, SOT502F, SOT502E). Verify physical compatibility with existing mounting structures when substituting these parts.

FAQ

What is the maximum junction temperature for the BLA9H0912L-250?

The maximum junction temperature (Tj) is 225 °C.

Can the BLA9H0912L-250 withstand severe load mismatches?

Yes, it is capable of withstanding a load mismatch corresponding to VSWR = 20:1 through all phases under specified operating conditions.

What type of ESD protection does this device feature?

It features integrated dual-sided ESD protection which enables excellent off-state isolation.