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The BQ2201SN-N is a CMOS SRAM Nonvolatile Controller Unit manufactured by Texas Instruments. It provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory. The device operates within a supply voltage range of 4.5 V to 5.5 V and supports one memory channel. It is housed in an 8-pin SOIC package with surface mount installation. The component is rated for an industrial operating temperature range from -40°C to +85°C. The working supply current is specified at 3 mA. This controller integrates battery backup switching capabilities to maintain data integrity during power loss.
Verify the specific suffix 'N' confirms the industrial temperature grade (-40°C to +85°C) rather than commercial grade. Confirm the package type is SOIC-8. Note that this component may be subject to obsolescence; check current lifecycle status before finalizing designs. Ensure compatibility with the target SRAM's voltage levels and interface requirements.
Select this part when a single SRAM bank requires nonvolatile retention without external microcontrollers. The industrial temperature rating suits harsh environments. Verify that the 3 mA operating current fits the system's power budget. Ensure the design accommodates the battery backup circuitry required for the integrated switching function.
The BQ2201SN-N belongs to the bq2201 series of memory controllers. It is designed specifically for applications where data retention is critical during power interruptions. The 'N' suffix denotes the industrial temperature range variant, distinguishing it from commercial versions. It serves as a dedicated solution for simplifying nonvolatile memory implementation in embedded designs.
Check for direct pin-compatible alternatives from Texas Instruments or other manufacturers offering similar SRAM nonvolatile controller functions. Verify that any substitute maintains the same voltage range and temperature specifications.