BQ2201SN

Overview

The bq2201SN is a CMOS SRAM Nonvolatile Controller Unit designed for 3-volt battery-backup applications. It operates with a +5V supply input and accepts two 3V primary backup cell inputs. The device provides power monitoring, write-protect control, and switching functions to convert standard CMOS SRAM into nonvolatile memory. Key electrical parameters include a chip-enable propagation delay of less than 10ns, an operating temperature range of 0°C to +70°C, and a maximum VCC supply voltage of 5.5V. It is available in an 8-pin narrow SOIC package.

Feature Summary

• Provides hardware-based conversion of standard CMOS SRAM into nonvolatile read/write memory through automatic power-fail detection and switching.

Applications

• Battery-backed SRAM systems
• Nonvolatile memory controller units

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm the package type and temperature rating. Ensure that the selected component matches the required commercial or industrial specifications before finalizing procurement orders.

Selection Notes

Select this component when designing systems requiring automatic data retention during power failures. Consider the threshold select pin configuration to determine the appropriate power-fail detection voltage relative to the system's supply tolerance requirements.

Part Context

This part belongs to the bq2201 family of SRAM Nonvolatile Controllers manufactured by Texas Instruments. The 'SN' suffix specifically denotes the 8-pin narrow Small Outline Integrated Circuit (SOIC) package option within the product lineup.

Replacement Considerations

Check for footprint compatibility if substituting with other variants like the DIP version. Verify that any alternative components support the same 5V logic levels and provide equivalent battery-switching capabilities.