BQ2204ASN

Overview

The BQ2204ASN is a CMOS SRAM Non-volatile Controller Unit manufactured by Texas Instruments. It provides functions for converting up to four banks of standard CMOS SRAM into non-volatile memory systems. The device operates within a supply voltage range of 4.5V to 5.5V and supports an operating temperature range of 0°C to 70°C. It utilizes a 16-pin PDIP package with through-hole mounting. The component includes power monitoring, switching for battery-backup applications, write-protect control, and a 2-input decoder for bank selection.

Feature Summary

• Provides power monitoring and switching capabilities specifically designed for 3-volt battery-backup applications.
• Integrates write-protect control mechanisms to manage data integrity in non-volatile memory configurations.
• Features a 2-input decoder architecture capable of controlling up to four distinct banks of SRAM.

Applications

• Converting standard CMOS SRAM into non-volatile memory systems
• Battery-backed memory controller units requiring power monitoring
• Embedded systems utilizing multiple SRAM banks with write-protection needs

Procurement Notes

Verify the specific suffix 'ASN' against the manufacturer's current datasheet to confirm pinout compatibility and package dimensions. Ensure the order quantity aligns with the tube packaging specifications provided by authorized distributors. Confirm RoHS compliance status and lead times directly with the supplier prior to finalizing procurement orders.

Selection Notes

Select this component when designing systems that require the conversion of volatile CMOS SRAM into non-volatile storage using external battery backup. It is suitable for applications needing control over up to four SRAM banks with integrated power management features. Ensure the system voltage matches the 4.5V to 5.5V operating range and that the 16-pin DIP package fits the PCB layout constraints.

Part Context

The BQ2204A series serves as a specialized logic IC for memory control. The ASN variant denotes a specific package configuration within the broader BQ2204 family. This component addresses the need for non-volatile memory solutions without relying on complex serial interfaces, offering direct parallel control for standard CMOS SRAM devices in industrial and commercial environments.

Replacement Considerations

Consult the official Texas Instruments replacement guide or equivalent cross-reference documents for verified substitute part numbers. Do not assume functional equivalence with other memory controllers without verifying pinout and electrical parameter alignment.

FAQ

How many SRAM banks can the BQ2204ASN control?

The device features a 2-input decoder that allows for the control of up to four banks of SRAM.

What is the supply voltage range for this controller?

The BQ2204ASN operates with a supply voltage ranging from 4.5V to 5.5V.