BSB012N03LX3G

Single FETs, MOSFETs Overview

The BSB012N03LX3G is an N-channel Power MOSFET from Infineon Technologies, designed for low-voltage switching applications. It features a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 120 A at 25°C. The device exhibits a typical on-resistance (RDS(on)) of 1.2 mΩ at a gate-source voltage of 10 V. Packaged in the SuperSO8 form factor with dimensions of 5x6 mm, it supports a junction temperature range from -55°C to 175°C. Key electrical parameters include a total power dissipation of 140 W and a thermal resistance from junction to case of 1.1 K/W.

Single FETs, MOSFETs Feature Summary

• Utilizes OptiMOS technology to achieve exceptionally low specific on-resistance for enhanced efficiency.
• Engineered with advanced cell architecture to minimize conduction losses while maintaining robust switching performance.
• Features a compact SuperSO8 package optimized for high-power density surface-mount applications.

Single FETs, MOSFETs Applications

• Low-side switching in DC-DC converter topologies
• Motor control circuits requiring high current handling
• Power management systems in automotive electronics

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including suffixes against official Infineon documentation to ensure correct package and tape/reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Cross-reference datasheet revisions to ensure compatibility with design requirements before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current capacity within a 30 V system. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance. Ensure gate drive voltages remain within the recommended limits to maintain optimal RDS(on) performance and prevent device degradation during operation.

Single FETs, MOSFETs Part Context

This component belongs to Infineon's portfolio of low-voltage power MOSFETs utilizing OptiMOS technology. It is engineered for applications demanding high efficiency and compact footprints. The SuperSO8 package provides a balance between thermal performance and board space savings, making it suitable for modern electronic designs where size constraints are critical.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon replacement guides for verified substitutes. Ensure any alternative device matches the pinout, voltage ratings, and thermal characteristics. Verify that proposed replacements meet the same regulatory and quality standards required for the original design.

Single FETs, MOSFETs FAQ

What is the maximum operating junction temperature for this MOSFET?

The maximum operating junction temperature is 175°C.

Does this device support automotive applications?

Yes, the component is qualified for automotive applications according to relevant industry standards.