BSB056N10NN3GXUMA3

$0.99

Description：TRENCH >=100V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:2d8e1377d712 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSB056N10NN3GXUMA3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSB056N10NN3GXUMA3

Description：TRENCH >=100V
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：5.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：74 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5500 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 78W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：MG-WDSON-5-3
Package / Case：DirectFET™ Isometric MN

Single FETs, MOSFETs datasheet and documents for BSB056N10NN3GXUMA3

BSB056N10NN3GXUMA3

Single FETs, MOSFETs Overview

The BSB056N10NN3GXUMA3 is an N-Channel OptiMOS™ 3 Power-MOSFET with a 100 V drain-source breakdown voltage. It features a maximum on-resistance of 5.6 mΩ at VGS=10V and ID=30A, supporting a continuous drain current of 83 A at TC=25°C. The device utilizes the MG-WDSON-5 package, offering dual-sided cooling capabilities and a low profile under 0.7 mm. Key electrical parameters include a typical gate charge of 56 nC, a pulsed drain current of 332 A, and an avalanche energy rating of 450 mJ. Operating temperatures range from -40°C to +150°C.

Single FETs, MOSFETs Feature Summary

Dual-sided cooling design for enhanced thermal dissipation
Optimized for high switching frequency DC/DC converter applications
Low parasitic inductance structure
Excellent figure of merit combining low on-resistance and gate charge

Single FETs, MOSFETs Applications

High switching frequency DC/DC converters
Power management systems requiring low profile components
Applications utilizing dual-sided PCB cooling techniques

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix GXUMA3 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the MG-WDSON-5 footprint matches your PCB layout requirements precisely. Confirm RoHS compliance status through the manufacturer's latest material content declaration before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a balance between low conduction losses and fast switching speeds within a compact form factor. The dual-sided cooling capability allows for higher power density compared to single-sided packages. Evaluate the thermal resistance values relative to your specific PCB copper area and airflow conditions to ensure junction temperature limits are not exceeded during operation.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS™ 3 family, designed for general-purpose power switching applications. It represents a silicon-based MOSFET technology optimized for efficiency. The MG-WDSON-5 package provides a robust solution for surface-mount assembly, distinguishing it from traditional leaded packages by offering superior thermal performance in a minimal footprint.