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BSC009NE2LS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 41A/223A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC009NE2LS5ATMA1
- Description：MOSFET N-CH 25V 41A/223A TDSON
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：41A (Ta), 223A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：0.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：57 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：3900 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 74W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-7
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC009NE2LS5ATMA1
Single FETs, MOSFETs Overview
The BSC009NE2LS5ATMA1 is an N-channel OptiMOS™ 5 power MOSFET in a PG-TDSON-8 package. It features a drain-source voltage of 25 V and a maximum on-resistance of 0.9 mΩ at VGS=4.5 V. The device supports a continuous drain current of 223 A at TC=25°C and a pulsed current of 892 A. Key electrical parameters include a gate charge of 28 nC (VGS=0 to 4.5 V) and an output charge of 28 nC. Thermal resistance from junction to case is 1.7 K/W, with a maximum operating temperature of 150°C.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance buck converters
- Very low on-resistance at VGS=4.5 V
- Superior thermal resistance characteristics
- 100% avalanche tested
Single FETs, MOSFETs Applications
- High-performance buck converters
- Target applications qualified according to JEDEC standards
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code matches the required package variant. Confirm that the component meets RoHS compliance and halogen-free requirements per IEC61249-2-21. Ensure the application environment respects the absolute maximum ratings, particularly regarding case temperature derating and PCB cooling area specifications for accurate thermal performance.
Single FETs, MOSFETs Selection Notes
Select this component when low RDS(on) at 4.5 V drive is critical for efficiency. The PG-TDSON-8 package provides a compact footprint suitable for dense layouts. Consider the 150°C maximum junction temperature for high-temperature environments. Verify that the 25 V rating aligns with the system's supply voltage and transient conditions.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS™ 5 family, designed for low-voltage, high-current applications. The SuperSO8 (PG-TDSON-8) package integrates multiple drain pins for enhanced current handling and thermal dissipation. It represents a generation focused on minimizing switching losses and conduction losses in synchronous rectification scenarios.
Single FETs, MOSFETs Replacement Considerations
Check datasheets for other OptiMOS 5 devices with similar 25 V ratings and TDSON-8 packages. Ensure pinout compatibility and verify that thermal resistance and current ratings meet or exceed the original design requirements.
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