BSC009NE2LSATMA1

$1.74

Description：MOSFET N-CH 25V 41A/255A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:27e051ad8cc6 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC009NE2LSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 41A/255A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC009NE2LSATMA1

Description：MOSFET N-CH 25V 41A/255A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：41A (Ta), 255A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：0.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：126 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5800 pF @ 12 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 96W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-7
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC009NE2LSATMA1

BSC009NE2LSATMA1

Single FETs, MOSFETs Overview

The BSC009NE2LSATMA1 is an N-channel power MOSFET from Infineon's OptiMOS 5 portfolio, housed in a PQFN 3.3x3x3 mm package. It features a drain-source voltage of 25 V and a maximum continuous drain current of 223 A at 25°C case temperature. The device achieves an ultra-low on-resistance of 0.9 mΩ at 10 V gate drive. Key electrical parameters include a typical gate charge of 52 nC at 4.5 V and 92 nC at 10 V. It operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 69 W.

Single FETs, MOSFETs Feature Summary

Monolithically integrated Schottky-like diode for enhanced performance
Ultra-low gate charges suitable for high-frequency switching
Small PQFN package enabling flexible PCB layout routing

Single FETs, MOSFETs Applications

Or-ing switches
Load switching applications
High-efficiency power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix ATMA1 against official datasheets to confirm packaging details such as tape and reel specifications. Ensure the component matches the OptiMOS 5 generation requirements for your design. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when minimizing conduction losses is critical due to its industry-leading low RDS(on). The small form factor makes it ideal for space-constrained designs requiring high current handling. Consider the integrated diode feature if reverse current protection or synchronous rectification is needed without additional discrete components.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS 5 family, designed for superior efficiency in automotive and industrial power applications. It represents a significant advancement over previous generations by offering lower resistance and faster switching characteristics within a compact footprint, targeting modern high-density power electronics.