BSC010N04LSTATMA1

$3.22

Description：MOSFET N-CH 40V 39A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6513456793e8 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC010N04LSTATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 39A/100A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC010N04LSTATMA1

Description：MOSFET N-CH 40V 39A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：39A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：133 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9520 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3W (Ta), 167W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8 FL
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC010N04LSTATMA1

BSC010N04LSTATMA1

Single FETs, MOSFETs Overview

The BSC010N04LST is a single N-channel OptiMOS Power-MOSFET rated for 40 V drain-source voltage. It features a maximum on-resistance of 1.0 mΩ at VGS=10 V and ID=50 A, with a continuous drain current capability of 292 A at TC=25 °C. The device utilizes the TDSON-8 FL package, which incorporates an enlarged source interconnection to enhance solder joint reliability and thermal performance. It supports operation up to 175 °C junction temperature and includes 100% avalanche testing.

Single FETs, MOSFETs Feature Summary

Optimized specifically for synchronous rectification applications
Features an enlarged source interconnection in the TDSON-8 FL package for superior thermal resistance and higher solder joint reliability
Logic-level gate drive capability with low on-resistance
Qualified according to JEDEC standards for target applications

Single FETs, MOSFETs Applications

Synchronous rectification stages in power supplies
HV DC-DC converter stages in server switch mode power supplies
Medium to high power SMPS converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the datasheet table to ensure correct package and marking identification. Confirm that the application environment respects the absolute maximum ratings for pulsed currents and avalanche energy. Ensure PCB layout matches the recommended board pads for the TDSON-8 FL outline to achieve specified thermal characteristics.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical in synchronous rectifier designs. The TDSON-8 FL package offers improved thermal dissipation compared to standard variants due to the enlarged source connection. Consider the 175 °C rating for high-temperature environments and verify compatibility with logic-level gate drivers given the threshold voltage specifications.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS family of power MOSFETs, designed for efficiency and robustness. The 'FL' suffix denotes the specific TDSON-8 FL package variant featuring the enlarged source pad. It is distinct from other BSC series parts by its specific RDS(on) limits and package thermal profile.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 40 V rating, 1.0 mΩ max RDS(on), and TDSON-8 FL package dimensions. Verify pinout compatibility and thermal resistance values. Check if alternative packages like standard TDSON-8 meet the specific solder joint reliability requirements of the design.

Single FETs, MOSFETs FAQ

What is the significance of the 'FL' designation in the package name?

The 'FL' indicates the TDSON-8 FL package, which features an enlarged source interconnection. This design improves thermal resistance and increases solder joint reliability compared to standard packages.