BSC016N06NSATMA1

$2.00

Description：MOSFET N-CH 60V 30A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0bd8bd3f3b72 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC016N06NSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 30A/100A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC016N06NSATMA1

Description：MOSFET N-CH 60V 30A/100A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：1.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：2.8V @ 95µA
Gate Charge (Qg) (Max) @ Vgs：71 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5200 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 139W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8 FL
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC016N06NSATMA1

BSC016N06NSATMA1

Single FETs, MOSFETs Overview

The BSC016N06NSATMA1 is an N-channel OptiMOS Power-MOSFET rated for 60V drain-source voltage. It features a maximum on-state resistance of 1.6mΩ at 10V gate drive and supports a continuous drain current of up to 234A at 25°C case temperature. The device operates within a junction temperature range of -55°C to 175°C, with a total power dissipation capability of 167W at 25°C. Key dynamic parameters include a typical gate charge of 71nC and a reverse transfer capacitance of 96pF.

Single FETs, MOSFETs Feature Summary

Optimized specifically for synchronous rectification applications
Fully qualified according to JEDEC standards for industrial applications
Features enlarged source interconnection for higher solder joint reliability
Subjected to 100% avalanche testing

Single FETs, MOSFETs Applications

Industrial motor control systems
Synchronous rectification in DC-DC converters
Power management circuits for industrial equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against the manufacturer's official documentation to confirm packaging details and reel specifications. Ensure that the PG-TDSON-8 package footprint matches the target PCB design requirements. Confirm compliance with RoHS and halogen-free standards as stated in the datasheet before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical due to its optimized RDS(on). Consider the high thermal performance and 175°C rating for demanding industrial environments. Evaluate the avalanche energy capabilities if the application involves inductive load switching. Verify that the gate charge characteristics align with the driving circuit's switching frequency requirements.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS Power-MOSFET family, designed for high-efficiency power switching. It utilizes advanced silicon technology to achieve superior thermal resistance compared to standard MOSFETs. The PG-TDSON-8 package provides a compact solution suitable for surface-mount assembly in space-constrained electronic designs.