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BSC017N04NSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 30A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC017N04NSGATMA1
- Description：MOSFET N-CH 40V 30A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：30A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs：108 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8800 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 139W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC017N04NSGATMA1
Single FETs, MOSFETs Overview
The BSC017N04NSGATMA1 is an N-channel Power MOSFET from Infineon's OptiMOS 3 family, housed in a SuperSO8 package. It features a maximum drain-source voltage of 40 V and a typical on-resistance of 1.7 mΩ at 10 V gate drive. The device supports a continuous drain current of up to 100 A and a pulsed current of 400 A. Key electrical parameters include a total power dissipation of 139 W, a thermal resistance junction-to-case of 0.9 K/W, and a typical gate charge of 81 nC. The threshold voltage ranges from 2 V to 4 V, with an operating temperature range spanning -55 °C to 150 °C.
Single FETs, MOSFETs Feature Summary
- OptiMOS 3 technology provides low on-resistance for high efficiency.
- SuperSO8 package enables compact surface-mount design.
- High current handling capability supports demanding power applications.
Single FETs, MOSFETs Applications
- DC-DC converters
- Motor control circuits
- Power management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix GATMA1 against official Infineon documentation to confirm tape-and-reel packaging and lead-free compliance. Confirm RoHS status through certified datasheets. Check for end-of-life notifications or recommended new designations prior to procurement to ensure long-term supply stability.
Single FETs, MOSFETs Selection Notes
Select this component when a 40 V rating and low RDS(on) are required in a small SuperSO8 footprint. Ensure the application operates within the specified 150 °C junction temperature limit. Verify that the gate drive voltage meets the 10 V requirement for optimal on-resistance performance.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS 3 series, designed for low-voltage power switching. The SuperSO8 package offers improved thermal performance compared to standard SO-8 variants. It is intended for use in automotive and industrial power electronics where space constraints and efficiency are critical factors.
Single FETs, MOSFETs Replacement Considerations
Check for direct pin-compatible alternatives within the same 40 V OptiMOS family. Verify that any substitute maintains identical package dimensions and thermal characteristics to ensure board compatibility without redesign.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
