ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSC018NE2LSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 29A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC018NE2LSATMA1
- Description：MOSFET N-CH 25V 29A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：29A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2800 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC018NE2LSATMA1
Single FETs, MOSFETs Overview
The BSC018NE2LSATMA1 is an N-channel OptiMOS Power-MOSFET with a 25 V drain-source breakdown voltage. It features a maximum on-resistance of 1.8 mΩ at VGS=4.5 V and supports a continuous drain current of 153 A at TC=25°C. The device operates within a junction temperature range of -55°C to +150°C, dissipating up to 69 W. Key dynamic parameters include a total gate charge of 39 nC (0V to 10V) and an output charge of 21 nC.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance buck converter applications
- Features very low on-resistance at logic-level gate drive voltages
- Includes superior thermal resistance characteristics
- Subjected to 100% avalanche testing
Single FETs, MOSFETs Applications
- High-performance Buck converters
- Automotive target applications qualified according to JEDEC standards
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure component authenticity by checking manufacturer markings and datasheet revision levels. Confirm RoHS compliance and halogen-free status requirements prior to procurement.
Single FETs, MOSFETs Selection Notes
Select this component when low RDS(on) at VGS=4.5 V is required for efficient logic-level switching. Consider the PG-TDSON-8 package dimensions and thermal resistance values for PCB layout. Evaluate the 153 A continuous current rating against actual case temperature conditions rather than ambient limits.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon OptiMOS Power-MOSFET family designed for 25 V applications. It utilizes PG-TDSON-8 packaging to provide enhanced thermal performance compared to standard surface-mount options. The product line targets automotive and industrial power conversion systems requiring robust switching capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference documents for verified substitute part numbers. Do not assume functional equivalence based solely on voltage or current ratings without verifying pinout compatibility and thermal characteristics.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
