BSC019N02KSGAUMA1

Single FETs, MOSFETs Overview

The BSC019N02KSGAUMA1 is an N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS 2 technology. It features a 20V drain-source voltage rating and is housed in a PG-TDSON-8 package. The device supports a continuous drain current of 30A at ambient temperature and 100A at case temperature. Key electrical parameters include a maximum on-resistance of 1.95mΩ, a gate charge of 64nC, and a threshold voltage of 1.2V. It operates within a temperature range of -55°C to +150°C with power dissipation ratings of 2.8W (Ta) and 104W (Tc).

Single FETs, MOSFETs Feature Summary

• OptiMOS 2 technology provides low on-resistance for high efficiency.
• Compact PG-TDSON-8 surface mount package design.
• Enhanced thermal performance with high case temperature current capability.

Single FETs, MOSFETs Applications

• Low voltage DC-DC converter circuits
• Power management modules
• Consumer electronics power stages

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the AUMA1 suffix to ensure correct packaging and tape specifications. Confirm RoHS compliance status as required by your manufacturing standards. Check the official datasheet for moisture sensitivity classification and reflow soldering profile requirements before assembly. Ensure the component matches the specific OptiMOS 2 generation intended for your design.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current solution is required in a compact footprint. The OptiMOS 2 technology offers a balance between conduction losses and switching performance suitable for efficient power conversion. Consider the thermal constraints of the TDSON-8 package and the specific current derating curves provided in the datasheet for accurate thermal management planning.

Single FETs, MOSFETs Part Context

This component belongs to the BSC019 series of N-channel MOSFETs from Infineon Technologies. It is part of the broader portfolio of OptiMOS power transistors designed for low-voltage applications. The series focuses on minimizing on-resistance while maintaining robust reliability in small surface-mount packages for modern electronic devices.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before substitution. Ensure any substitute component meets the same thermal and mechanical specifications required by the original design.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current at case temperature?

The maximum continuous drain current at case temperature is 100A.

What technology does this MOSFET utilize?

It utilizes Infineon's OptiMOS 2 technology.