BSC019N04LSATMA1

Single FETs, MOSFETs Overview

The BSC019N04LSATMA1 is an N-channel OptiMOS Power-MOSFET with a 40 V drain-source breakdown voltage. It features a maximum on-state resistance of 1.9 mΩ at VGS = 4.5 V and a continuous drain current of 161 A at TC = 25 °C. The device operates within a junction temperature range of -55 °C to 175 °C. Key electrical parameters include a gate charge of 41 nC (VGS = 20 V) and 21 nC (VGS = 4.5 V). It utilizes the PG-TDSON-8 package.

Single FETs, MOSFETs Feature Summary

• Fully qualified according to JEDEC standards for industrial applications
• Optimized for high-performance synchronous rectification in switching power supplies
• Features very low on-resistance specifically optimized at VGS = 4.5 V
• Includes 100% avalanche testing for enhanced reliability

Single FETs, MOSFETs Applications

• High-performance synchronous rectification in DC-DC converters
• Synchronous buck converter topologies
• Industrial power supply modules

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix ATMA1 corresponds to the specific tape-and-reel packaging configuration required for automated assembly processes. Confirm that the component meets all applicable environmental directives, including RoHS compliance and halogen-free status as defined by IEC61249-2-21. Ensure the procurement channel provides valid traceability documentation consistent with Infineon's quality management systems.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust industrial-grade performance with a 40 V rating. The low RDS(on) at VGS = 4.5 V makes it suitable for logic-level drive applications. Evaluate thermal constraints carefully, as the device supports up to 175 °C operation but requires adequate PCB copper area for optimal heat dissipation via the bottom thermal pad.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ Power-MOSFET family, which integrates advanced trench technology for low conduction losses. The BSC019N04LS variant specifically targets industrial environments, offering superior thermal resistance compared to standard packages. It serves as a core switching element in modern compact power conversion architectures.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the PG-TDSON-8 footprint and maintain equivalent or lower RDS(on) values. Verify that any substitute also supports 175 °C junction temperatures and possesses similar gate charge characteristics to preserve switching speed and driver compatibility.