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BSC020N025S G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 30A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC020N025S G
- Description：MOSFET N-CH 25V 30A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：30A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs：66 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8290 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.8W (Ta), 104W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC020N025S G
Single FETs, MOSFETs Overview
The BSC020N025S G is a Gallium Nitride (GaN) field-effect transistor manufactured by Infineon Technologies. It features an N-channel configuration housed in a TDSON-8 package. The device is rated for a maximum drain-source voltage of 25V and supports a continuous drain current of 29A. This component belongs to the CoolGaN™ product family, which utilizes high-efficiency GaN technology designed for power conversion applications.
Single FETs, MOSFETs Feature Summary
- Utilizes Gallium Nitride (GaN) technology for enhanced switching performance
- Designed as a bidirectional switch suitable for battery disconnect applications
- Optimized for high-frequency operation with superior efficiency
Single FETs, MOSFETs Applications
- Battery disconnect switches
- High-frequency power conversion circuits
- Efficient DC-DC converter stages
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix 'G' against official Infineon documentation to confirm RoHS compliance status. Confirm that the TDSON-8 package dimensions match your PCB footprint requirements. Check the current lifecycle status, as availability may be limited or subject to change. Ensure the 25V rating aligns with your system's voltage headroom needs before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component when designing systems requiring low-voltage, high-current GaN solutions. The 25V rating suits specific low-voltage bus architectures. Consider the thermal management capabilities inherent to the TDSON-8 package. Evaluate the trade-off between the high switching speed of GaN and potential EMI concerns compared to traditional silicon MOSFETs.
Single FETs, MOSFETs Part Context
This part is part of Infineon's CoolGaN™ portfolio, focusing on mid-voltage bidirectional switches. It differs from standard silicon MOSFETs by offering faster switching speeds and lower conduction losses at comparable voltage ratings. The product line targets modern power supplies demanding higher power density and efficiency.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
