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BSC020N03LSGATMA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is LV POWER MOS. Review the specifications below when checking this part for your BOM.
The Infineon BSC020N03LSGATMA2 is an N-channel enhancement mode Power-MOSFET from the OptiMOS 3 series. It features a TDSON-8 surface-mount package with dimensions of 6.35mm x 5.35mm x 1.1mm. Key electrical parameters include a drain-source voltage (Vds) of 30V, a continuous drain current (Id) of 100A, and a maximum on-resistance (RDS(on)) of 2.9mΩ at VGS = 4.5V. The device has a typical gate charge (Qg) of 34nC, a maximum power dissipation (Pd) of 96W, and operates within a temperature range of -55°C to 150°C.
Verify the specific ordering suffix to confirm the packaging format, as variations exist between cut tape and reel configurations. Ensure the component meets RoHS compliance requirements if mandated by your assembly standards. Cross-reference the datasheet revision date to confirm technical specifications align with your design constraints before finalizing procurement orders.
Select this component for designs requiring low conduction losses in 30V environments. The TDSON-8 package offers a compact footprint suitable for space-constrained PCB layouts. Consider the thermal performance relative to the 96W dissipation rating when designing heat sinking solutions for high-current applications.
This part belongs to Infineon's OptiMOS 3 family, which focuses on low-voltage power management. It serves as a surface-mount alternative to through-hole devices, providing improved thermal performance and automated assembly compatibility. The series is engineered to balance switching speed and conduction efficiency for modern power electronics.
Direct substitutes may include other OptiMOS 3 variants with similar voltage and current ratings. Verify pinout compatibility and thermal resistance values when considering cross-brand replacements to ensure circuit integrity.
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