BSC022N04LSATMA1

Single FETs, MOSFETs Overview

The BSC022N04LSATMA1 is an N-channel OptiMOS Power-MOSFET with a 40 V drain-source breakdown voltage. It features a maximum on-resistance of 2.2 mΩ at VGS=10 V and 3.2 mΩ at VGS=4.5 V. The device supports a continuous drain current of 134 A at TC=25 °C (VGS=10 V) and handles pulsed currents up to 536 A. Total gate charge is 37 nC at VGS=10 V, with output charge at 33 nC. Thermal resistance from junction to case is 1.8 K/W maximum. Operating temperature ranges from -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

• Optimized for high-performance synchronous rectification in switching mode power supplies.
• Features very low on-resistance at logic-level gate voltages.
• Includes superior thermal resistance characteristics.
• Undergoes 100% avalanche testing.

Single FETs, MOSFETs Applications

• Synchronous rectification in switching mode power supplies
• DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure that the PG-TDSON-8 package dimensions align with the target PCB footprint requirements. Confirm compliance with RoHS standards and halogen-free status according to IEC61249-2-21 before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical at both standard and logic-level gate drive voltages. The 40 V rating provides margin for 12 V or 24 V systems. Evaluate the thermal resistance parameters against the expected ambient conditions and PCB copper area to ensure safe operating temperatures under continuous load.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS family of power MOSFETs manufactured by Infineon Technologies. It utilizes the SuperSO8 (PG-TDSON-8) surface-mount package designed for efficient heat dissipation. The device integrates an intrinsic body diode suitable for synchronous applications.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 40 V N-channel MOSFETs in the PG-TDSON-8 package. Verify pinout compatibility and ensure equivalent RDS(on) and thermal performance metrics match the original design requirements.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current at a case temperature of 25 °C?

The maximum continuous drain current is 134 A when VGS is 10 V and the case temperature is maintained at 25 °C.

Is the device qualified for specific industry standards?

Yes, the device is qualified according to JEDEC standards for target applications.