BSC028N06NSSCATMA1

$2.64

Description：MOSFET N-CH 60V 137A WSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bf1e2217dfdf Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC028N06NSSCATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 137A WSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC028N06NSSCATMA1

Description：MOSFET N-CH 60V 137A WSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：137A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：2.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3.3V @ 50µA
Gate Charge (Qg) (Max) @ Vgs：49 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3375 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3W (Ta), 100W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-WSON-8-2
Package / Case：8-PowerWDFN

Single FETs, MOSFETs datasheet and documents for BSC028N06NSSCATMA1

BSC028N06NSSCATMA1

Single FETs, MOSFETs Overview

The BSC028N06NSSC is a 60 V N-channel OptiMOS™ power transistor housed in a PG-VSON-8 or PG-WSON-8 dual-side cooled package. It features a maximum drain-source on-state resistance of 2.8 mΩ at 10 V gate drive and a continuous drain current rating of 137 A at 25 °C case temperature. The device exhibits a total gate charge of 43 nC for synchronous FET applications and supports an operating junction temperature up to 175 °C. Thermal performance includes a junction-to-case bottom thermal resistance of 1.5 K/W maximum.

Single FETs, MOSFETs Feature Summary

Dual-side cooled package design providing the lowest junction-to-top thermal resistance
Optimized specifically for high-performance synchronous rectification in switch mode power supplies
Qualified according to relevant JEDEC tests with 100% avalanche testing

Single FETs, MOSFETs Applications

Synchronous rectification in switch mode power supplies
High-performance DC-DC converters
Server and desktop power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant (PG-VSON-8 or PG-WSON-8) required for your PCB footprint, as both are supported under this part number. Confirm that the marking code '028N06SC' aligns with your assembly tracking requirements. Ensure thermal interface materials accommodate the exposed tab for optimal heat dissipation.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses and superior thermal handling are critical for compact power designs. The 60 V rating suits standard bus voltages, while the 175 °C rating allows operation in thermally constrained environments. Evaluate the 2.8 mΩ Rds(on) against system efficiency targets compared to standard MOSFET packages.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS™ Power Transistor family, engineered for advanced power conversion needs. The BSC028N06NSSC utilizes a specialized surface-mount technology package designed to minimize thermal impedance. It represents a progression in silicon-on-insulator or trench gate technologies optimized for high-frequency switching applications.