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BSC028N06NSTATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 24A/100A TDSON. Review the specifications below when checking this part for your BOM.
The BSC028N06NSTATMA1 is an N-channel OptiMOS power transistor with a 60 V drain-source voltage rating. It features a maximum on-state resistance of 2.8 mΩ at 10 V gate drive and supports a continuous drain current of 137 A at 25 °C case temperature. The device includes avalanche testing, operates up to 175 °C junction temperature, and utilizes a PG-TDSON-8 package.
Verify the specific ordering suffix against official Infineon documentation to confirm tape-and-reel packaging details. Ensure the component meets RoHS compliance and halogen-free requirements as specified in the datasheet before finalizing procurement specifications.
Select this component for applications requiring low conduction losses and high thermal stability. Consider the 2.8 mΩ RDS(on) and 137 A current capability when designing for high-efficiency DC-DC converters or AC-DC adapters operating within the specified voltage range.
This part belongs to the Infineon OptiMOS family of differentiated MOSFETs designed for high efficiency. It is specifically engineered to reduce system size and cost by minimizing parallel device requirements while maintaining robust performance in demanding power conversion environments.
BSC028N06NS
Yes, the datasheet explicitly states it is optimized for high-performance SMPS applications, including synchronous rectification.
The device is rated for an operating and storage temperature range up to 175 °C.
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