BSC0302LSATMA1

Single FETs, MOSFETs Overview

The BSC0302LS is an N-channel OptiMOS™ 3 power transistor with a 120 V drain-source voltage rating. It features a maximum on-resistance of 8.0 mΩ at VGS=10V and supports a continuous drain current of 99 A at 25°C case temperature. The device operates up to 150°C junction temperature and includes 100% avalanche testing. Key electrical parameters include a gate charge of 79 nC, output charge of 79 nC, and a pulsed drain current capability of 394 A.

Single FETs, MOSFETs Feature Summary

• Logic-level N-channel architecture optimized for high-frequency switching applications
• Excellent figure of merit combining low gate charge with minimal on-resistance
• Robust thermal performance supporting operation up to 150°C junction temperature
• Halogen-free construction compliant with IEC61249-2-21 standards

Single FETs, MOSFETs Applications

• High-frequency synchronous rectification circuits
• Charger and adapter designs
• Power delivery systems requiring logic level drive compatibility

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against official Infineon documentation to ensure correct package marking and revision status. Confirm RoHS compliance and halogen-free status requirements match project specifications. Check for any recent datasheet revisions that may impact pinout or thermal characteristics before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 120 V rating with low conduction losses. The logic-level gate threshold allows direct drive from standard logic controllers. Ensure adequate thermal management is provided to maintain junction temperatures within the specified 150°C limit during continuous operation.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 3 family of power transistors designed by Infineon Technologies. It utilizes advanced trench technology to achieve superior efficiency compared to previous generations. The PG-TDSON-8 package provides a compact footprint suitable for dense PCB layouts while maintaining robust thermal dissipation capabilities.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure replacement parts match the 120 V rating, TDSON-8 package dimensions, and thermal resistance values. Verify that alternative components meet the same logic-level gate drive requirements and avalanche energy ratings.