Single FETs, MOSFETs BSC034N03LSGATMA1 product image

BSC034N03LSGATMA1

$1.04
  • Description:MOSFET N-CH 30V 22A/100A TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:cd8ad5d45e30 Category: Brand:

  
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BSC034N03LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 22A/100A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC034N03LSGATMA1

  • Description:MOSFET N-CH 30V 22A/100A TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:22A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3.4mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4300 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 57W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8-5
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC034N03LSGATMA1

BSC034N03LSGATMA1

Single FETs, MOSFETs Overview

The BSC034N03LSGATMA1 is an N-channel Power MOSFET from Infineon Technologies, part of the OptiMOS 5 product family. It features a TDSON-8 surface-mount package and utilizes silicon technology. Key electrical specifications include a drain-source voltage (Vds) of 30 V, a continuous drain current (Id) of 100 A at case temperature, and a maximum on-resistance (Rds(on)) of 2.5 mΩ. The device operates with a gate-source voltage range of ±20 V and has a threshold voltage typically around 1.2 V to 2 V. It supports a junction temperature up to +150 °C and offers low gate charge for efficient switching.

Single FETs, MOSFETs Feature Summary

  • Optimized low on-resistance for high efficiency in power conversion applications
  • Advanced trench gate technology for fast switching speeds
  • Robust thermal performance with low thermal resistance
  • Designed for automotive and industrial reliability standards

Single FETs, MOSFETs Applications

  • Automotive power distribution units
  • DC-DC converter modules
  • Motor control circuits
  • Industrial load switches

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including suffixes against official Infineon documentation to ensure correct packaging and tape/reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability varies by region and production cycle. Ensure ESD handling protocols are followed during storage and assembly.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET with high current capability and low Rds(on) is required. Compare gate charge and total gate charge against driver capabilities to ensure adequate switching speed. Verify that the TDSON-8 package fits the PCB footprint and thermal management requirements of the target design.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS 5 series, which represents advanced silicon MOSFET technology. It is designed to replace older generations like OptiMOS 3 in similar voltage classes, offering improved figure-of-merit through lower on-resistance and faster switching characteristics within the same package form factor.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the OptiMOS 5 family with different current ratings if higher Id is needed. Verify thermal resistance values against existing designs when substituting with other manufacturers' 30 V TDSON-8 devices.

BSC034N03LSGATMA1BSC034N03LSGATMA1
$1.04
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