BSC036NE7NS3GATMA1

Single FETs, MOSFETs Overview

The BSC036NE7NS3GATMA1 is an N-channel OptiMOS™ 3 power transistor with a 75 V drain-source breakdown voltage. It features a maximum on-state resistance of 3.6 mΩ at VGS=10 V and ID=50 A, supporting a continuous drain current of 159 A at TC=25 °C. The device utilizes a PG-TDSON-8 package (SuperSO8) for surface mount installation. Key electrical parameters include a gate threshold voltage ranging from 2.3 V to 3.8 V, a total gate charge of 63.4 nC, and a maximum power dissipation of 156 W at TC=25 °C. Operating temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Optimized technology specifically designed for synchronous rectification applications
• Excellent figure of merit combining low gate charge and low on-state resistance
• Superior thermal resistance characteristics for efficient heat dissipation
• 100% avalanche tested to ensure robustness under transient conditions

Single FETs, MOSFETs Applications

• High frequency switching circuits
• DC/DC converters
• Synchronous rectification modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS and REACH standards as indicated in the datasheet. Confirm that the target application environment falls within the specified operating temperature range and thermal constraints defined in the maximum ratings section.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical due to its optimized RDS(on) value. The high continuous current capability makes it suitable for power stages requiring significant load handling. Consider the thermal resistance values when designing PCB copper areas for adequate heat sinking. Verify that the gate drive voltage meets the minimum requirements for full enhancement.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 3 family of silicon power MOSFETs manufactured by Infineon Technologies. It is housed in the SuperSO8 (PG-TDSON-8) surface-mount package, which provides a compact footprint with enhanced thermal performance compared to standard SO-8 packages. The product is Pb-free plated and halogen-free according to IEC61249-2-21.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same series include BSC036NE7NS3 G. Cross-family replacements require matching voltage, current, and package constraints.