BSC037N025S G

Single FETs, MOSFETs Overview

The BSC037N025S G is an OptiMOS™2 N-channel power transistor designed for high-performance switching applications. It features a 25 V drain-source breakdown voltage and a maximum on-resistance of 3.7 mΩ at 10 V gate drive. The device supports a continuous drain current of 100 A and a pulsed current of 200 A. Key electrical parameters include a total gate charge of 29 nC, a reverse diode forward recovery charge of 12 nC, and a dv/dt rating of 6 kV/µs. Thermal performance includes a junction-to-case resistance of 1.8 K/W.

Single FETs, MOSFETs Feature Summary

• Optimized technology specifically engineered for notebook DC/DC converters
• Avalanche rated with single-pulse energy capability up to 350 mJ
• High-speed reverse diode characterized by a dv/dt rating of 6 kV/µs
• Qualified according to JEDEC standards for industrial target applications

Single FETs, MOSFETs Applications

• Notebook DC/DC converters
• High-performance synchronous rectification in SMPS
• Low-voltage load switch circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'G' against official Infineon documentation to confirm compliance status and lead time requirements. Ensure that the PG-TDSON-8 package dimensions match your PCB footprint design constraints. Confirm thermal management strategies align with the specified junction-to-case resistance values provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical in 24 V systems. The optimized gate charge minimizes switching losses during rapid transitions. Evaluate the thermal resistance characteristics against your system's cooling capabilities to ensure operation within the -55 °C to 150 °C temperature range without exceeding safe operating area limits.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™2 family from Infineon Technologies, representing a generation of silicon MOSFETs focused on balancing on-resistance and gate charge. It utilizes a PG-TDSON-8 surface-mount package to provide superior thermal dissipation compared to traditional plastic packages, facilitating efficient heat transfer in compact electronic designs.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements may not match the specific avalanche energy ratings or dv/dt specifications required for synchronous rectification duties.