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BSC039N06NSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 19A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC039N06NSATMA1
- Description：MOSFET N-CH 60V 19A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：19A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：3.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 36µA
- Gate Charge (Qg) (Max) @ Vgs：27 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 69W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-6
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC039N06NSATMA1
Single FETs, MOSFETs Overview
The BSC039N06NSATMA1 is a single N-channel Power MOSFET from Infineon Technologies, belonging to the OptiMOS 5 product family. It utilizes silicon technology and is housed in a TDSON-8 surface-mount package. The device features a drain-source voltage (Vds) rating of 60 V and supports a continuous drain current (Id) of 100 A. Its maximum on-state resistance (Rds(on)) is specified at 3.9 mOhms. The gate-source voltage range extends from -20 V to +20 V, with a typical gate charge (Qg) of 27 nC. The component operates within a temperature range of -55 °C to +150 °C and has a power dissipation capability of 69 W.
Single FETs, MOSFETs Feature Summary
- OptiMOS 5 technology integration for optimized performance
- Low on-state resistance for high efficiency
- Enhanced thermal stability in compact packaging
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Motor control systems
- Power supply modules
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix ATMA1 to confirm tape-and-reel packaging configuration. Ensure compatibility with TDSON-8 footprint requirements during PCB layout. Cross-reference datasheet revisions for any updates to thermal characteristics or electrical limits before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when a 60 V rating and high current capacity are required in a small form factor. Compare Rds(on) values against alternative OptiMOS 5 devices to balance conduction losses with switching speed requirements. Evaluate thermal management needs based on the 69 W power dissipation limit and junction-to-ambient thermal resistance.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS 5 series, which represents advanced trench technology for low-voltage applications. It is designed to replace older generations of MOSFETs by offering lower on-resistance and improved switching characteristics within similar package dimensions, supporting modern high-density power electronics designs.
Single FETs, MOSFETs Replacement Considerations
Check for direct cross-references such as BSZ039N06NS, noting potential differences in package type (PQFN vs TDSON). Verify pinout compatibility and thermal pad configurations before substituting.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
