BSC0402NSATMA1

Description：MOSFET N-CH 150V 80A TDSON-8
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:42ecdcf69241 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC0402NSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 150V 80A TDSON-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC0402NSATMA1

Description：MOSFET N-CH 150V 80A TDSON-8
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：8V, 10V
Rds On (Max) @ Id, Vgs：9.3mOhm @ 40A, 10
Vgs(th) (Max) @ Id：4.6V @ 107µA
Gate Charge (Qg) (Max) @ Vgs：33 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 75 V
FET Feature：-
Power Dissipation (Max)：139W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-7
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC0402NSATMA1

BSC0402NSATMA1

Single FETs, MOSFETs Overview

The BSC0402NSATMA1 is an OptiMOS™5 N-channel power transistor with a 150 V drain-source voltage rating. It features a maximum continuous drain current of 80 A at 25 °C and a pulsed current capability of 320 A. The device exhibits a maximum on-state resistance of 9.3 mΩ at VGS=10 V. Key dynamic parameters include a total gate charge of 33 nC and a reverse recovery charge of 60 nC. Thermal performance includes a junction-to-case thermal resistance of 0.54 °C/W typical. It operates within a temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

Optimized for high-performance synchronous rectification in switch-mode power supplies.
Features superior thermal resistance characteristics for efficient heat dissipation.
Includes 100% avalanche testing to ensure robustness against transient energy events.

Single FETs, MOSFETs Applications

Synchronous rectification in high-performance SMPS designs
Power conversion stages requiring low RDS(on) and fast switching

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code matches the required tape-and-reel configuration. Confirm that the PG-TDSON-8 package dimensions align with the target PCB footprint. Ensure compliance with RoHS and halogen-free standards as specified in the datasheet documentation.

Single FETs, MOSFETs Selection Notes

Select this component when a 150 V rating is required alongside high current handling capabilities. The low gate charge supports efficient driver design, while the avalanche-rated construction provides resilience in inductive load scenarios. Evaluate thermal management requirements based on the specified junction-to-case resistance.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS™5 family, designed for advanced power delivery applications. It utilizes trench technology to achieve low on-resistance and fast switching speeds within a compact surface-mount package suitable for dense board layouts.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other OptiMOS™5 devices offering similar voltage and current ratings. Verify pinout compatibility and thermal resistance values before substitution.