BSC042N03S G

Single FETs, MOSFETs Overview

The BSC042N03S G is an N-channel Power MOSFET from Infineon Technologies, part of the OptiMOS 3 series. It features a TDSON-8 surface-mount package and utilizes Silicon technology. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of up to 95 A at case temperature or 20 A at ambient. The device exhibits a low on-resistance (Rds(on)) of 4.2 mOhms at 10 V gate drive. It supports a gate-source voltage range of ±20 V with a threshold voltage of approximately 2.3 V. Thermal performance includes a power dissipation of 62.5 W at case temperature and 2.8 W at ambient. Operating temperatures range from -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

• Optimized for fast switching applications in switch-mode power supplies
• Designed specifically for notebook DC/DC converter architectures
• Features excellent figure of merit through optimized gate charge and on-resistance product

Single FETs, MOSFETs Applications

• Switch-mode power supplies (SMPS)
• Notebook DC/DC converters
• Target applications qualified according to JEDEC standards

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the manufacturer marking against official datasheet specifications. Confirm the specific suffix 'G' indicates RoHS compliance and lead-free status as documented. Ensure the ordering part number matches the exact voltage and current ratings required for your design, as variations exist within the OptiMOS family. Cross-reference the package type PG-TDSON-8-5 to ensure mechanical compatibility with your PCB footprint.

Single FETs, MOSFETs Selection Notes

Select this component when designing for high-efficiency power conversion in portable electronics. The low Rds(on) minimizes conduction losses, while the fast switching characteristics reduce dynamic losses. Consider the thermal management requirements given the distinct power dissipation ratings at ambient versus case temperatures. Ensure the gate drive voltage aligns with the 10 V test condition for optimal on-resistance performance.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS 3 portfolio, which focuses on optimizing the trade-off between switching speed and conduction loss. The TDSON-8 package provides a compact solution suitable for space-constrained mobile applications. As part of the BSC042N series, it represents a generation of silicon MOSFETs engineered for improved thermal performance and reliability compared to earlier iterations.

Single FETs, MOSFETs Replacement Considerations

Check for direct cross-references within the OptiMOS 3 family. Verify that any substitute maintains the 30 V rating and compatible package dimensions. Ensure the replacement meets the same JEDEC qualification standards if used in certified notebook designs.