BSC048N025S G

$1.38

Description：MOSFET N-CH 25V 19A/89A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9d16ce2c1a97 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC048N025S G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 19A/89A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC048N025S G

Description：MOSFET N-CH 25V 19A/89A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：19A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2670 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 63W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-1
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC048N025S G

BSC048N025S G

Single FETs, MOSFETs Overview

The BSC048N025S G is an OptiMOS®2 N-channel power transistor with a 25 V drain-source breakdown voltage and a maximum on-resistance of 4.8 mΩ at VGS=10 V. It supports a continuous drain current of 89 A at TC=25 °C and a pulsed current of 200 A. The device features a total gate charge of 162 nC, avalanche energy rating of 185 mJ, and reverse diode dv/dt capability of 6 kV/µs. Thermal resistance from junction to case is 2 K/W via the bottom pad. Operating temperature ranges from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Optimized for high-performance synchronous rectification in notebook DC/DC converters
Rated for avalanche energy and high-speed reverse diode switching (dv/dt)
Logic level operation with excellent gate charge versus on-resistance product

Single FETs, MOSFETs Applications

Notebook DC/DC converters
High-performance synchronous rectification applications
General purpose fast switching MOSFET circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the marking code '48N025S' against the PG-TDSON-8 package outline. Confirm datasheet revision 1.2 compliance. Ensure thermal management design accounts for the specified junction-to-case resistance values. Validate that application voltages remain within the 25 V limit.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, high-current synchronous rectification where fast switching and avalanche robustness are required. Compare the 4.8 mΩ RDS(on) and 162 nC gate charge against alternative devices to ensure optimal efficiency in notebook power stages. Verify compatibility with logic-level gate drive requirements.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS®2 family, designed specifically for mobile computing power supplies. It utilizes advanced silicon technology to achieve superior thermal resistance and low conduction losses compared to previous generations. The PG-TDSON-8 package facilitates efficient heat dissipation through the exposed copper pad.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other OptiMOS®2 or OptiMOS®3 series parts offering similar 25 V ratings and TDSON-8 packaging. Ensure replacement devices match the 4.8 mΩ maximum on-resistance and 89 A continuous current specifications. Verify pinout compatibility and thermal characteristics before substitution.