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BSC0504NSIATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 21A/72A TDSON. Review the specifications below when checking this part for your BOM.
The BSC0504NSI is an N-channel OptiMOS5 power MOSFET with a 30 V drain-source breakdown voltage. It features a maximum on-resistance of 3.7 mΩ at VGS=10V and 4.7 mΩ at VGS=4.5V, supporting a continuous drain current of 72 A at TC=25°C. The device includes a monolithic integrated Schottky-like diode and is qualified according to JEDEC standards. It operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering code against the manufacturer's official documentation to ensure correct package and marking specifications. Confirm that the component meets all required environmental compliance standards, including RoHS and halogen-free requirements, before finalizing procurement decisions.
Select this component when designing circuits requiring low conduction losses at logic-level gate voltages. The integrated Schottky-like diode makes it suitable for synchronous rectification or freewheeling applications. Ensure thermal management aligns with the specified thermal resistance values for the target operating environment.
This part belongs to the OptiMOS5 family from Infineon Technologies, designed for efficient power switching in compact packages. It utilizes PG-TDSON-8 packaging to provide robust thermal performance and electrical characteristics suitable for modern surface-mount assembly processes.
BSC0500NSIATMA1
Yes, the datasheet specifies a maximum RDS(on) of 4.7 mΩ at VGS=4.5V, indicating optimization for lower gate drive voltages.
It features a monolithically integrated Schottky-like diode, which aids in reverse current handling.
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