Single FETs, MOSFETs BSC0504NSIATMA1 product image

BSC0504NSIATMA1

$0.54
  • Description:MOSFET N-CH 30V 21A/72A TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:0f17b58b35f8 Category: Brand:

  
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BSC0504NSIATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 21A/72A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC0504NSIATMA1

  • Description:MOSFET N-CH 30V 21A/72A TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:21A (Ta), 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3.7mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:960 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 30W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8-6
  • Package / Case:8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC0504NSIATMA1

BSC0504NSIATMA1

Single FETs, MOSFETs Overview

The BSC0504NSI is an N-channel OptiMOS5 power MOSFET with a 30 V drain-source breakdown voltage. It features a maximum on-resistance of 3.7 mΩ at VGS=10V and 4.7 mΩ at VGS=4.5V, supporting a continuous drain current of 72 A at TC=25°C. The device includes a monolithic integrated Schottky-like diode and is qualified according to JEDEC standards. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Optimized for high-performance buck converters
  • Monolithically integrated Schottky-like diode
  • Very low on-resistance at VGS=4.5V
  • 100% avalanche tested

Single FETs, MOSFETs Applications

  • High-performance buck converters
  • Power management circuits
  • Multimarket applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct package and marking specifications. Confirm that the component meets all required environmental compliance standards, including RoHS and halogen-free requirements, before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring low conduction losses at logic-level gate voltages. The integrated Schottky-like diode makes it suitable for synchronous rectification or freewheeling applications. Ensure thermal management aligns with the specified thermal resistance values for the target operating environment.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS5 family from Infineon Technologies, designed for efficient power switching in compact packages. It utilizes PG-TDSON-8 packaging to provide robust thermal performance and electrical characteristics suitable for modern surface-mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

BSC0500NSIATMA1

Single FETs, MOSFETs FAQ

Is the BSC0504NSI compatible with logic-level drive voltages?

Yes, the datasheet specifies a maximum RDS(on) of 4.7 mΩ at VGS=4.5V, indicating optimization for lower gate drive voltages.

What type of internal diode does this MOSFET feature?

It features a monolithically integrated Schottky-like diode, which aids in reverse current handling.

BSC0504NSIATMA1BSC0504NSIATMA1
$0.54
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