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BSC052N08NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 95A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC052N08NS5ATMA1
- Description：MOSFET N-CH 80V 95A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：5.2mOhm @ 47.5A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 49µA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2900 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-7
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC052N08NS5ATMA1
Single FETs, MOSFETs Overview
The BSC052N08NS5ATMA1 is an N-channel OptiMOS™ 5 power transistor with a drain-source voltage of 80 V. It features a maximum on-state resistance of 5.2 mΩ and a continuous drain current of 95 A at 25°C case temperature. The device operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a gate charge of 32 nC, output charge of 39 nC, and a thermal resistance from junction to case of 0.9 K/W.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance synchronous rectification in switch-mode power supplies
- Features superior thermal resistance characteristics for efficient heat dissipation
- Undergoes 100% avalanche testing to ensure robustness under transient conditions
Single FETs, MOSFETs Applications
- Synchronous rectification in DC-DC converters
- High-efficiency switch-mode power supply designs
- General-purpose low-voltage power switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix against official Infineon documentation to confirm package type and reel specifications. Ensure compliance with RoHS and halogen-free requirements as stated in the datasheet. Confirm that the application environment stays within the specified thermal and electrical limits defined in the maximum ratings table.
Single FETs, MOSFETs Selection Notes
Select this component when an 80 V rating and low RDS(on) are required for synchronous rectification. Consider the PG-TDSON-8 package dimensions and thermal performance relative to the PCB cooling area. Evaluate the gate charge and threshold voltage against the driver capabilities to ensure optimal switching efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 5 family of power transistors designed by Infineon Technologies. It utilizes silicon technology to deliver enhanced performance in compact surface-mount packages. The series targets applications demanding high efficiency and reliability in power conversion systems.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement guides for verified substitutes. Cross-reference key parameters such as voltage rating, current capacity, and package outline before substitution.
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