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BSC059N03S G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 17.5A/73A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC059N03S G
- Description：MOSFET N-CH 30V 17.5A/73A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：17.5A (Ta), 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2670 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：17.5W (Ta), 48W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-1
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC059N03S G
Single FETs, MOSFETs Overview
The BSC059N03S G is an N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 17.5 A at 25°C. The device is housed in a TDSON-8 surface-mount package. Key electrical parameters include a maximum on-resistance (Rds(on)) of 14 mΩ and a gate charge (Qg) of 10 nC. It operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology for optimized switching performance
- Low gate charge for efficient drive requirements
- Enhancement mode single channel configuration
Single FETs, MOSFETs Applications
- DC-DC converter synchronous rectification
- Motor control circuits
- Power management systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'G' against official Infineon documentation to confirm RoHS compliance status. Confirm the exact Id rating (17.5A vs 73A pulsed) in the datasheet before design finalization. Check lifecycle status as some listings indicate obsolete or NRND status. Ensure thermal management aligns with the TDSON-8 package limitations.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage, high-current applications requiring compact SMD packaging. Compare Rds(on) and Qg values against alternatives like the BSC059N04LS G for similar voltage ratings. Consider the TDSON-8 footprint compatibility during PCB layout. Evaluate thermal resistance characteristics for the intended power dissipation levels.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS family of silicon-based N-channel MOSFETs. It shares the TDSON-8 package form factor with other devices in the series, such as the BSC059N04LS G. The product line focuses on balancing low on-resistance with fast switching speeds for efficient power conversion.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with Infineon's official replacement guide for verified equivalents.
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