BSC060P03NS3EGATMA1

Single FETs, MOSFETs Overview

The BSC060P03NS3EGATMA1 is a single N-channel power MOSFET from Infineon Technologies, part of the OptiMOS P3 family. It features a TDSON-8 surface-mount package and utilizes silicon technology. The device supports a drain-source voltage (Vds) of -30 V and a continuous drain current (Id) of up to 78.6 A at 25°C. Key electrical parameters include a maximum on-resistance (Rds(on)) of 6.1 mΩ at Vgs = 10 V, a gate charge (Qg) of 57.7 nC, and a total power dissipation (Pd) of 69 W. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Optimized for low conduction losses with high current handling capability in a compact footprint.
• Enhanced reliability through robust avalanche rating and electrostatic discharge protection mechanisms.
• Designed for efficient switching performance with optimized gate charge characteristics.

Single FETs, MOSFETs Applications

• High-performance laptop battery management systems
• Power path management and load switching circuits
• Synchronous buck DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'GATMA1' against official documentation to confirm tape-and-reel packaging details. Ensure compatibility with standard SMD reflow profiles and check for RoHS compliance status as indicated in the latest datasheet revision. Confirm availability status directly with authorized distributors.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high efficiency in low-voltage, high-current environments. Consider the TDSON-8 package size for space-constrained designs. Evaluate thermal management requirements based on the 69 W power dissipation rating and ensure adequate PCB copper area for heat spreading.

Single FETs, MOSFETs Part Context

This component belongs to Infineon's OptiMOS P3 series, which focuses on improving power density and switching efficiency for p-channel MOSFETs. The series targets modern portable electronics and industrial control systems where small form factors and high reliability are critical design constraints.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other OptiMOS P3 devices in the same voltage class. Verify pinout compatibility and thermal resistance values before substituting with alternative manufacturers' parts to ensure circuit stability.