BSC066N06NSATMA1

Single FETs, MOSFETs Overview

The BSC066N06NSATMA1 is a single N-channel OptiMOS power transistor with a 60 V drain-source breakdown voltage. It features a maximum on-state resistance of 6.6 mΩ and supports a continuous drain current of 64 A at 25 °C case temperature. The device utilizes a PG-TDSON-8 package, providing superior thermal resistance with a junction-to-case value of 1.6 K/W. Key dynamic parameters include a total gate charge of 17 nC and output charge of 19 nC. It operates within a temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Optimized for high-performance synchronous rectification in switch-mode power supplies
• Features superior thermal resistance through an optimized SuperSO8 package design
• Subjected to 100% avalanche testing to ensure robustness under transient conditions

Single FETs, MOSFETs Applications

• Synchronous rectification in DC/DC converters
• High-efficiency switch-mode power supply designs
• General low-voltage power switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm packaging details and reel specifications. Ensure that the component meets RoHS compliance and halogen-free requirements as stated in the datasheet. Cross-reference the PG-TDSON-8 package outline dimensions during PCB layout to guarantee mechanical fit and proper soldering.

Single FETs, MOSFETs Selection Notes

Select this component when a balance between low conduction losses and fast switching speeds is required for 60 V systems. The low gate charge facilitates efficient driver performance, while the high current capability suits compact power stages. Evaluate the thermal management strategy based on the specified junction-to-case resistance to maintain safe operating temperatures under load.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS family of silicon MOSFETs manufactured by Infineon Technologies. It is designed using advanced planar trench technology to minimize on-resistance and improve switching characteristics. The product line targets efficiency improvements in modern power electronics, adhering to JEDEC qualification standards for reliability.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 60 V rating, TDSON-8 package, and comparable RDS(on) and Qg values. Verify pinout compatibility and thermal characteristics before integration.