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BSC0704LSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 11A/47A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC0704LSATMA1
- Description：MOSFET N-CH 60V 11A/47A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：9.4mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs：9.4 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1300 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 36W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-6
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC0704LSATMA1
Single FETs, MOSFETs Overview
The BSC0704LS is a 60 V N-channel OptiMOS power transistor in PG-TDSON-8 package. Key parameters include RDS(on) max 9.4 mΩ at VGS=10 V, ID max 47 A at TC=25 °C, and QG total 7 nC (0 to 4.5 V). It features EAS 13 mJ, thermal resistance RthJC 3.5 K/W, and operates from -55 °C to 150 °C.
Single FETs, MOSFETs Feature Summary
- Optimized for high-frequency switching applications
- Logic-level gate drive capability
- Superior thermal resistance characteristics
Single FETs, MOSFETs Applications
- Charger designs
- High-frequency switching circuits
Single FETs, MOSFETs Procurement Notes
Verify the exact ordering code against Infineon documentation, as suffixes define specific tape-and-reel or cut-tape configurations. Confirm RoHS compliance and halogen-free status per IEC61249-2-21 before procurement. Ensure the component matches the required PG-TDSON-8 footprint and marking codes.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage, high-current applications requiring fast switching speeds. The logic-level gate threshold simplifies driver design. Evaluate thermal performance based on PCB copper area, as RthJA depends on a 6 cm² cooling area. Consider avalanche energy ratings if inductive loads are present.
Single FETs, MOSFETs Part Context
This device belongs to the OptiMOS family of power transistors. It utilizes silicon technology and is designed for efficient power conversion. The SuperSO8/PG-TDSON-8 package provides compact surface-mount integration with enhanced thermal dissipation capabilities compared to traditional packages.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other 60 V N-channel MOSFETs in PG-TDSON-8 packages. Verify pinout compatibility and ensure equivalent RDS(on), QG, and thermal resistance values match the original design requirements.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
