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BSC070N10NS5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 80A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC070N10NS5ATMA1
- Description：MOSFET N-CH 100V 80A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id：3.8V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：38 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2700 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-7
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC070N10NS5ATMA1
Single FETs, MOSFETs Overview
The BSC070N10NS5ATMA1 is an N-channel OptiMOS™ 5 power transistor with a 100 V drain-source voltage rating. It features a maximum on-state resistance of 7.0 mΩ and supports continuous drain currents up to 80 A at 25°C case temperature. The device utilizes a PG-TDSON-8 package, providing optimized thermal performance for high-efficiency applications. Key dynamic parameters include a total gate charge of 30 nC and an output charge of 41 nC.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance synchronous rectification in switching mode power supplies
- Features superior thermal resistance characteristics within the SuperSO8 form factor
- Undergoes 100% avalanche testing to ensure robustness under transient conditions
Single FETs, MOSFETs Applications
- Synchronous rectification in high-performance SMPS designs
- General-purpose low-voltage power switching applications
- DC-DC converter stages requiring efficient heat dissipation
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix against official Infineon documentation to confirm exact packaging and reel specifications. Ensure that the component meets all relevant JEDEC qualification standards required for the target application environment before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component when a balance between low conduction losses and manageable gate drive requirements is necessary. The 100V rating provides adequate headroom for standard 48V systems, while the TDSON-8 package facilitates compact PCB layouts compared to larger through-hole alternatives.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 5 family, representing advanced silicon technology from Infineon Technologies. It is designed to replace older generations like OptiMOS 3 or 4 where improved switching speeds and lower gate charges are critical for maintaining high efficiency in modern power conversion topologies.
Single FETs, MOSFETs Replacement Considerations
Direct replacements include BSC070N10NS3GATMA1 (OptiMOS 3) or BSC070N10NS5SC (SuperSO8 DSC variant). Verify pinout compatibility and thermal resistance differences when substituting.
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