BSC072N025S G

Single FETs, MOSFETs Overview

The BSC072N025S G is an OptiMOS™2 N-channel power transistor designed for high-efficiency switching applications. It features a PG-TDSON-8 package with a maximum drain-source voltage of 25 V and a continuous drain current of 40 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 7.2 mΩ at VGS=10 V and 10.9 mΩ at VGS=4.5 V. Key electrical parameters include a gate threshold voltage range of 1.2 V to 2 V, total gate charge of 18 nC, and avalanche energy capability of 160 mJ. Thermal resistance from junction to case is 2.1 K/W via the bottom pad.

Single FETs, MOSFETs Feature Summary

• Optimized technology specifically engineered for notebook DC/DC converters
• Logic level operation enabling direct drive from standard logic interfaces
• Avalanche rated with dv/dt rating for robust transient handling
• Superior thermal resistance characteristics for efficient heat dissipation

Single FETs, MOSFETs Applications

• Switching mode power supplies (SMPS)
• Notebook DC/DC converters
• Target applications qualified according to JEDEC standards

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the marking code '72N025S' against the datasheet specifications. Confirm RoHS compliance and halogen-free status per IEC61249-2-21 requirements. Ensure ordering suffixes match the exact OptiMOS™2 generation. Cross-reference thermal resistance values with specific PCB footprint designs to validate performance expectations.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance and fast switching are critical for efficiency in compact power stages. The logic level gate drive simplifies control circuitry design. Evaluate thermal management strategies based on the specified junction-to-case resistance. Consider the avalanche rating for circuits prone to inductive load transients or voltage spikes.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™2 family, representing a second-generation enhancement in power MOSFET technology. It utilizes silicon-based vertical FET structures optimized for low RDS(on) and improved gate charge characteristics compared to earlier generations.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure replacement parts maintain compatible voltage ratings, current capabilities, and package dimensions. Verify that alternative devices meet the same JEDEC qualification standards if required for the target application.