BSC076N04NDATMA1

Overview

The BSC076N04NDATMA1 is a dual N-channel OptiMOS-T2 power transistor with a 40 V drain-source voltage rating. It features a maximum on-state resistance of 7.6 mΩ and supports a continuous drain current of 20 A at 25 °C case temperature. The device operates within a junction temperature range of -55 °C to +175 °C and dissipates up to 65 W. Packaged in PG-TDSON-8-4, it includes an integrated body diode with a forward current of 20 A.

Feature Summary

• Dual N-channel configuration for space-efficient circuit designs
• Optimized technology specifically tailored for drive applications
• Superior thermal resistance characteristics for effective heat dissipation
• 100% avalanche tested to ensure robustness under transient conditions

Applications

• Motor drive circuits
• Power switching modules
• Industrial control systems

Procurement Notes

Verify the component authenticity by checking the manufacturer's marking against official datasheet specifications. Confirm that the package type matches the required PCB footprint dimensions. Ensure compliance with RoHS and halogen-free standards as specified in the product validation section before finalizing procurement orders.

Selection Notes

Select this component when a compact dual-switch solution is required for low-voltage drive applications. The TDSON-8-4 package offers a balance between thermal performance and board space efficiency. Consider the 7.6 mΩ on-resistance for calculating conduction losses in high-frequency switching environments.

Part Context

This part belongs to Infineon's OptiMOS-T2 family, designed for enhanced performance in automotive and industrial sectors. It utilizes advanced silicon technology to achieve lower on-resistance compared to previous generations while maintaining reliability through rigorous testing protocols defined by JEDEC standards.

Replacement Considerations

Direct substitutes include other dual N-channel MOSFETs from the same series with identical pinouts and similar electrical ratings. Verify thermal resistance values and package dimensions to ensure compatibility with existing PCB layouts without redesigning the cooling infrastructure.

FAQ

What is the maximum pulsed drain current capability?

The device can handle a pulsed drain current of 80 A at an ambient temperature of 25 °C.

Is the component suitable for high-temperature environments?

Yes, the operating and storage temperature range extends up to +175 °C, making it suitable for demanding thermal conditions.

Does the device include protection against avalanche breakdown?

Yes, the component is 100% avalanche tested and supports a single-pulse avalanche energy of 87 mJ.