ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSC0802LSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 20A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC0802LSATMA1
- Description：MOSFET N-CH 100V 20A/100A TDSON
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2.3V @ 115µA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6500 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：156W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-7
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC0802LSATMA1
Single FETs, MOSFETs Overview
The BSC0802LS is an N-channel OptiMOS™ 5 power transistor with a 100 V drain-source breakdown voltage. It features a maximum on-state resistance of 3.4 mΩ at VGS=10 V and supports a continuous drain current of 100 A at TC=25 °C. The device utilizes PG-TDSON-8 packaging, providing superior thermal resistance with a junction-to-case value of 0.5 °C/W typ. Key dynamic parameters include a total gate charge of 37 nQ (0V to 4.5V) and an output charge of 91 nC. It is optimized for high-performance synchronous rectification in SMPS applications.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance synchronous rectification in switching mode power supplies
- Features superior thermal resistance for efficient heat dissipation
- Logic-level operation suitable for low-voltage drive applications
- 100% avalanche tested for enhanced ruggedness
Single FETs, MOSFETs Applications
- Synchronous rectification in DC/DC converters
- High-performance switching mode power supplies
- Low-side switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code BSC0802LS against the manufacturer's official datasheet revision history to ensure component compatibility. Confirm package marking '0802LS' matches physical inventory. Validate RoHS compliance and halogen-free status per IEC61249-2-21 standards before integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low conduction losses and high current handling in compact footprints. The logic-level threshold facilitates direct drive from standard logic controllers. Ensure thermal management strategies account for the specified junction-to-case resistance to maintain reliability under continuous load conditions.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS™ 5 family, designed for automotive and industrial power applications. It represents a generation of trench MOSFETs focusing on reduced RDS(on) and improved switching characteristics within small surface-mount packages.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other PG-TDSON-8 100V N-channel MOSFETs from the same manufacturer series. Verify pinout compatibility and thermal performance metrics before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
