BSC080N03MSGATMA1

Single FETs, MOSFETs Overview

The BSC080N03MSGATMA1 is an N-channel enhancement mode Power-MOSFET from the OptiMOS™ 3 M-Series. It features a PG-TDSON-8 package with a maximum drain-source voltage of 30 V and a continuous drain current of 53 A at Tc=25°C. The device exhibits a maximum on-resistance of 10.2 mΩ at VGS=4.5 V and 8 mΩ at VGS=10 V. Total gate charge is typically 21 nC at VGS=10 V. Thermal resistance from junction to case is 3.6 K/W via the bottom pad. Operating temperature ranges from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Optimized for 5V driver applications including notebooks, VGA circuits, and point-of-load converters.
• Features low figure of merit for switching (FOMSW) suitable for high-frequency synchronous rectification in SMPS.
• Qualified according to JEDEC standards for target automotive and industrial applications.
• Superior thermal resistance enabled by the exposed bottom pad design.

Single FETs, MOSFETs Applications

• Notebook power management systems
• Video graphics array (VGA) power supplies
• Point-of-load (POL) converter modules

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific ordering suffix matches the required tape-and-reel packaging configuration. Ensure compliance with RoHS directives and halogen-free requirements as specified in the datasheet documentation before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing for 5V logic-level gate drive compatibility. Evaluate the trade-off between the 10.2 mΩ RDS(on) at 4.5V and the lower 8 mΩ at 10V based on the available gate driver voltage. Consider the 3.6 K/W thermal resistance for PCB layout planning to ensure adequate heat dissipation within the 150 °C junction limit.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 3 M-Series family, designed specifically for medium-voltage power switching applications. It utilizes silicon technology within a surface-mount PG-TDSON-8 footprint. The series emphasizes low conduction losses and robust avalanche capability for reliable operation in compact electronic designs.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement maintains identical pinout, voltage ratings, and thermal characteristics to avoid redesigning the PCB footprint or cooling infrastructure.

Single FETs, MOSFETs FAQ

What is the maximum avalanche energy rating?

The single pulse avalanche energy (EAS) is rated at 15 mJ under conditions of ID=35 A and RGS=25 Ω.

How does the on-resistance vary with gate voltage?

The maximum RDS(on) is 10.2 mΩ at VGS=4.5 V and decreases to 8 mΩ at VGS=10 V, both measured at ID=30 A.