BSC080N12LSGATMA1

Single FETs, MOSFETs Overview

The BSC080N12LSGATMA1 is an N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS 5 technology. It features a drain-source voltage (VDS) of 120 V and a gate-source voltage (VGS) of ±20 V. The device offers a maximum on-state resistance (RDS(on)) of 8.0 mΩ at VGS = 10 V and 4.5 V. Continuous drain current ratings are 12 A at case temperature (Tc) and 99 A at ambient temperature (Ta). It is housed in a PG-TDSON-8 package with a thermal resistance junction-to-case (RthJC) of 1.6 K/W.

Single FETs, MOSFETs Feature Summary

• OptiMOS 5 technology provides superior switching performance compared to previous generations.
• Low on-state resistance enhances efficiency in high-current applications.
• Robust power MOSFET design ensures reliability under demanding conditions.

Single FETs, MOSFETs Applications

• High-efficiency power switching circuits
• DC-DC converter topologies
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package variant against the official datasheet to ensure compatibility with your PCB footprint and thermal requirements. Confirm the component status as this part may be subject to end-of-life restrictions or limited availability depending on the manufacturing batch date code.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses at 120 V. Ensure the gate drive voltage supports the specified RDS(on) thresholds. Evaluate thermal management strategies given the high current capabilities and package constraints to maintain junction temperatures within safe operating limits during peak load conditions.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS 5 family, engineered for advanced power switching applications. It represents a progression in silicon technology aimed at reducing energy consumption in power electronics. The PG-TDSON-8 package facilitates compact board layouts while providing adequate thermal dissipation for medium-power scenarios.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible substitutes within the same voltage and current class. Verify that alternative components meet or exceed the 8.0 mΩ RDS(on) specification and 120 V rating. Ensure thermal characteristics and gate charge parameters are compatible with existing drive circuits.