ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BSC0902NSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 24A/100A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC0902NSATMA1
- Description：MOSFET N-CH 30V 24A/100A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 48W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-6
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC0902NSATMA1
Single FETs, MOSFETs Overview
The BSC0902NSATMA1 is an N-channel Power MOSFET from Infineon's OptiMOS family, housed in a SuperSO8 5x6 package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 100 A at 25°C. The device exhibits a maximum on-resistance of 2.6 mΩ at 10 V gate drive and 3.5 mΩ at 4.5 V. Key electrical parameters include a typical gate charge of 13 nC at 4.5 V and 26 nC at 10 V, with input capacitance of 1700 pF and output capacitance of 600 pF. Thermal resistance is rated at 2.6 K/W, supporting a total power dissipation of 48 W within an operating temperature range of -55°C to 150°C.
Single FETs, MOSFETs Feature Summary
- Logic Level Gate Drive Capability
- SuperSO8 Surface Mount Packaging
Single FETs, MOSFETs Applications
- DC-DC Converter Modules
- Motor Control Systems
- Power Distribution Networks
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the ATMA1 suffix against official manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure design compatibility with the specified thermal resistance and power dissipation limits under actual operating conditions. Cross-reference datasheet revisions to validate parameter consistency for production integration.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low on-resistance and high current handling in compact surface-mount designs. The logic-level gate drive allows direct interfacing with standard microcontrollers or drivers without additional level shifting. Evaluate thermal management requirements based on the 2.6 K/W junction-to-case thermal resistance for reliable operation.
Single FETs, MOSFETs Part Context
This component belongs to the Infineon OptiMOS series, designed for efficient power switching in automotive and industrial environments. The SuperSO8 package provides robust mechanical stability and thermal performance suitable for high-density PCB layouts. It represents a specialized solution for low-voltage, high-current power management tasks.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout and electrical characteristics match before implementation.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
