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BSC0908NSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 34V 14A/49A TDSON. Review the specifications below when checking this part for your BOM.
The BSC0908NSATMA1 is an N-channel OptiMOS Power-MOSFET in a PG-TDSON-8 package. It features a drain-source voltage of 34 V and a maximum continuous drain current of 49 A at 25 °C case temperature. The device has a maximum on-resistance of 8 mΩ at VGS=10 V and 12.8 mΩ at VGS=4.5 V. Total gate charge is typically 6.8 nC at VGS=10 V, with a threshold voltage range of 1.2 to 2 V. It operates within a junction temperature range of -55 to 150 °C and includes avalanche rating capabilities.
Verify the component marking '0908NS' against official Infineon documentation to confirm authenticity. Ensure the ordering suffix matches ATMA1 for tape-and-reel packaging specifications. Confirm RoHS compliance and halogen-free status requirements align with project standards before finalizing procurement orders.
Select this component for designs requiring logic-level gate drive compatibility with low supply voltages. The low gate charge supports high-frequency operation while minimizing driver losses. Evaluate thermal management strategies carefully, as the package relies heavily on PCB copper area for effective heat dissipation during continuous conduction.
This part belongs to the OptiMOS family, designed specifically for efficiency improvements in power conversion. It utilizes advanced silicon technology to reduce conduction losses compared to standard MOSFETs. The PG-TDSON-8 package provides a compact footprint suitable for dense surface-mount layouts in modern electronic equipment.
Check pinout compatibility when substituting with other 34V N-channel MOSFETs in PG-TDSON-8 packages. Verify that replacement devices meet or exceed the 8 mΩ RDS(on) specification and support the required 49 A current rating under similar thermal conditions.
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