BSC0909NSATMA1

$0.75

Description：MOSFET N-CH 34V 12A/44A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:87df7e0785a9 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSC0909NSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 34V 12A/44A TDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSC0909NSATMA1

Description：MOSFET N-CH 34V 12A/44A TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：34 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1110 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 27W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TDSON-8-5
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for BSC0909NSATMA1

BSC0909NSATMA1

Single FETs, MOSFETs Overview

The BSC0909NSATMA1 is an N-channel OptiMOS Power-MOSFET in a PG-TDSON-8 package. It features a drain-source breakdown voltage of 34 V and a maximum continuous drain current of 44 A at Tc=25°C. The device exhibits a low on-resistance of 9.2 mΩ at Vgs=10V and 11.8 mΩ at Vgs=4.5V. Total gate charge is typically 7.2 nC at Vgs=10V, with a threshold voltage range of 1.2 to 2 V. It supports a junction temperature up to 150°C and includes avalanche testing.

Single FETs, MOSFETs Feature Summary

Optimized for 5V driver applications including notebooks, VGA circuits, and point-of-load converters.
Features very low on-resistance at logic-level gate voltages for improved efficiency.
Includes monolithically integrated Schottky-like diode characteristics.
Qualified according to JEDEC standards for target automotive and industrial applications.

Single FETs, MOSFETs Applications

Notebook power systems
Video graphics array (VGA) circuits
Point-of-load (POL) converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging and lead-free plating status. Confirm RoHS compliance and halogen-free status via the material content sheet. Ensure the component matches the PG-TDSON-8 footprint requirements for your PCB layout.

Single FETs, MOSFETs Selection Notes

Select this component when designing for 5V logic-level drivers requiring high-frequency switching performance. Evaluate the trade-off between the low FOMSW and the 34V breakdown rating. Consider the thermal resistance values for your specific copper area constraints to ensure safe operating area limits are met under pulsed conditions.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS family of power MOSFETs from Infineon Technologies. It utilizes silicon technology and is designed for surface-mount installation. The device is characterized by superior thermal resistance and optimized switching behavior compared to standard MOSFETs in similar packages.

Single FETs, MOSFETs Replacement Considerations

Check for direct replacements within the BSC0909 series or other OptiMOS devices with matching 34V ratings and TDSON-8 footprints. Verify pinout compatibility and thermal characteristics before substitution.