BSC0910NDIATMA1

Overview

The BSC0910NDI is a dual N-channel OptiMOS™ MOSFET in a PG-TISON-8 package. It features a 25 V drain-source breakdown voltage and logic-level gate drive rated at 4.5 V. Maximum on-state resistance is 5.9 mΩ at 10 V gate drive for Q1, and 1.6 mΩ for Q2. Continuous drain current reaches 40 A at Tc=70°C. The device includes an integrated monolithic Schottky-like diode and is qualified according to JEDEC standards.

Feature Summary

• Dual N-channel configuration optimized for high-performance Buck converter applications
• Logic-level gate drive capability rated at 4.5 V
• Integrated monolithic Schottky-like diode with avalanche testing

Applications

• High performance Buck converters
• Server power supply units (PSU)
• Telecommunications infrastructure AC-DC power conversion

Procurement Notes

Verify the component against the official Infineon datasheet revision 2.0. Confirm the specific marking code '0910NDI' matches the PG-TISON-8 package footprint. Ensure that the ordering suffix corresponds to the required tape and reel quantity specifications defined by the manufacturer.

Selection Notes

Select this component for low-voltage synchronous rectification where compact packaging is required. Evaluate thermal resistance values relative to the PCB copper area. Consider the asymmetric RDS(on) characteristics between the two channels when designing the control loop.

Part Context

This part belongs to the OptiMOS™ family of power MOSFETs designed for efficiency and reliability. It utilizes silicon technology within a surface-mount package suitable for automated assembly processes in consumer and industrial electronics manufacturing.

Replacement Considerations

Check pinout compatibility with existing PG-TISON-8 footprints. Verify that alternative devices meet the 25 V breakdown voltage requirement and support the necessary 4.5 V logic-level gate drive threshold.